Zobrazeno 1 - 10
of 29
pro vyhledávání: '"I. A. Kurova"'
Autor:
N. N. Ormont, I. A. Kurova
Publikováno v:
Semiconductors. 54:437-440
The effect of preliminary weak illumination at elevated temperatures on the photoelectric properties of undoped α-Si:H films is investigated. It is found that the dark conductivity and photoconductivity of films increases with the preliminary-illumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da4b19f582aa9eddfbccced86c88e7e
https://doi.org/10.1134/s1063782620040119
https://doi.org/10.1134/s1063782620040119
Autor:
N. N. Ormont, I. A. Kurova
Publikováno v:
Semiconductors. 51:417-419
The effect of weak illumination during the initial stage of relaxation of the dark metastable conductivity of an undoped a-Si:H film, photoinduced at T = 425 K, on the rate of its subsequent thermal relaxation is studied. It is found that the kinetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eaef5e801f6daca4aa6ddb7f76d888a
https://doi.org/10.1134/s1063782617040108
https://doi.org/10.1134/s1063782617040108
Autor:
I. A. Kurova, N. N. Ormont
Publikováno v:
Semiconductors. 49:590-592
The kinetics of relaxation of the light-induced (at a temperature above 140°C) dark conductivity of undoped a-Si:H films is studied. The calculated time dependences of the relaxation rate of the dark conductivity are analyzed under the assumption th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd8f537244ed488b283b6d81336964e6
https://doi.org/10.1134/s1063782615050127
https://doi.org/10.1134/s1063782615050127
Autor:
N. N. Ormont, I. A. Kurova
Publikováno v:
Semiconductors. 47:767-770
The temperature dependences of the dark conductivity and photoconductivity of annealed and preliminarily illuminated undoped a-Si:H films are studied in different modes of temperature variation. Also, the variation kinetics of the photoconductivity a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::738cf9e39d7972633de5dea575238664
https://doi.org/10.1134/s1063782613060158
https://doi.org/10.1134/s1063782613060158
Publikováno v:
Journal of Engineering Physics and Thermophysics. 85:723-731
The flow of an inviscid liquid containing condensed-phase particles around the recessed nozzle of the solidpropellant rocket motor has been considered. To take into account the complex geometry of the prenozzle space of the rocket motor, the equation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6f0b8664f3f2069048c6afdf47c23b7
https://doi.org/10.1007/s10891-012-0707-9
https://doi.org/10.1007/s10891-012-0707-9
Autor:
N. N. Ormont, I. A. Kurova
Publikováno v:
Semiconductors. 46:315-318
The absorbed light spectral composition determines the type of carrier generation: interband generation or mixed generation that also includes the generation of electrons from levels of the valence-band tail. The generation type affects the value and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::889f7db05e55a3fd28bcb028975a3b81
https://doi.org/10.1134/s1063782612030165
https://doi.org/10.1134/s1063782612030165
Autor:
I. A. Kurova, N. N. Ormont
Publikováno v:
Russian Microelectronics. 40:616-619
It is established that layered a-Si:H films grown by cyclic deposition with by-layer annealing in hydrogen plasma are characterized by high photosensitivity, which, at room temperature, exceeds by more than an order of magnitude the photosensitivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d65880d44eac331dcd28bb5750441e6b
https://doi.org/10.1134/s1063739711080129
https://doi.org/10.1134/s1063739711080129
Autor:
I. A. Kurova, N. N. Ormont
Publikováno v:
Semiconductors. 44:1576-1580
Temperature dependences of photoconductivity of layered and conventional undoped films of amorphous hydrogenated silicon have been studied within a wide range of temperatures (130–420 K) and illumination intensities (0.1–60 mW cm−2). It is esta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d57cd1458a1448b4467e1a18fa07fb34
https://doi.org/10.1134/s1063782610120079
https://doi.org/10.1134/s1063782610120079
Autor:
N. N. Ormont, I. A. Kurova
Publikováno v:
Moscow University Physics Bulletin. 64:527-531
It is established that both the amplitude and temperature dependence of dark conductivity and photoconductivity of preilluminated high-sensitivity layered films of amorphous hydrogenated silicon (a-Si:H) prepared by cyclic deposition with layer-by-la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c03c19bae9c4467c193c196a745e9f9
https://doi.org/10.3103/s0027134909050129
https://doi.org/10.3103/s0027134909050129
Autor:
N. N. Ormont, I. A. Kurova
Publikováno v:
Moscow University Physics Bulletin. 64:58-61
The thermal relaxation kinetics of light-induced metastable defects in a-Si:H was studied prior to and after partial relaxation in the dark and in a dim light. The film lighting was found to change the relaxation rate of the defects and their distrib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db4e3d7529d3d5aaa2ad506e9ef92c38
https://doi.org/10.3103/s0027134909010135
https://doi.org/10.3103/s0027134909010135