Zobrazeno 1 - 10
of 85
pro vyhledávání: '"I. A. Karpovich"'
Autor:
I. N. Karpovich
Publikováno v:
Journal of Engineering Physics and Thermophysics. 96:322-327
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41bff64b6ffde98863a98f0ff0522761
https://doi.org/10.1007/s10891-023-02691-3
https://doi.org/10.1007/s10891-023-02691-3
Autor:
I. A. Karpovich, E. А. Morgun
Publikováno v:
Uchenye zapiski St. Petersburg University of Management Technologies and Economics. :128-134
The present article examines the influence that the digital transformation process exerts on the university educational environment. The paper delves on the palette of digital technologies and educational solutions of the digital transformation in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c07bf4e17efad9f85b4d291991d80f
https://doi.org/10.35854/2541-8106-2022-2-128-134
https://doi.org/10.35854/2541-8106-2022-2-128-134
Autor:
I. A. Karpovich
Publikováno v:
Uchenye zapiski St. Petersburg University of Management Technologies and Economics. :5-10
The effectiveness of university academic process depends on how quickly and effectively a first-year student overcomes the challenges of the induction process. Creating conditions for the successful induction of students in the educational process is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a947cb4058fb39d79e2d72ebc0c5fdb4
https://doi.org/10.35854/2541-8106-2021-3-5-10
https://doi.org/10.35854/2541-8106-2021-3-5-10
Autor:
I. N. Karpovich
Publikováno v:
Journal of Engineering Physics and Thermophysics. 93:810-815
It has been shown that a nonuniform electric field can have a significant effect on the kinetics of diffusion capillary imbibition of liquids into thin dead-end capillaries that are a model of pore strictures. The results of calculations are in satis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073739f8403613a990f2d7c32ddfda49
https://doi.org/10.1007/s10891-020-02183-8
https://doi.org/10.1007/s10891-020-02183-8
Publikováno v:
Informatics in school. :40-47
The article describes the technology of developing and conducting geo games aimed at developing teenagers’ digital competence and consciousness of civic identity. Recommendations for creating and conducting an educational quest are presented. Step-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1db432beaffc5c0bc20a72edb7cea7b0
https://doi.org/10.32517/2221-1993-2019-18-2-40-47
https://doi.org/10.32517/2221-1993-2019-18-2-40-47
Autor:
I. N. Karpovich
Publikováno v:
Journal of Engineering Physics and Thermophysics. 90:1087-1092
The effect of an external inhomogeneous electric field on the speed of capillary soaking of Newtonian fluids into fine capillaries, representing a model of pore structures, is considered. The results of calculations are compared with experiment. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d37b77c96aa8911a4f89e5f37d7132e
https://doi.org/10.1007/s10891-017-1660-4
https://doi.org/10.1007/s10891-017-1660-4
Publikováno v:
Measurement Techniques. 57:489-492
Results of the development of a series of precision devices for active control of the manufactured precision of articles in the course of treatment are presented. The operating principles are described and the characteristics of such devices for cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbfca990bf3612066db5fbdfba25f663
https://doi.org/10.1007/s11018-014-0486-0
https://doi.org/10.1007/s11018-014-0486-0
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:27-35
A GaAs layer over Mn is found to acquire p-type conductivity in Au(Ni)/n-GaAs/InGaAs diode heteronanostructures due to laser δ-doping of Mn with a density of 0.15–1.5 monolayers, yielding the formation of a p-n junction in the Schottky barrier. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afe1010ad21398f3b31b75534bb530c0
https://doi.org/10.1134/s1027451013010187
https://doi.org/10.1134/s1027451013010187
Publikováno v:
Semiconductors. 46:1506-1509
The effect of He+ ion implantation on the photosensitivity spectra of InGaAs/GaAs quantum well and InAs/GaAs quantum dot heterostructures grown by metalorganic chemical vapor deposition (MOCVD) epitaxy is studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26422dc3b32150d1e4f59c99c377462
https://doi.org/10.1134/s1063782612120068
https://doi.org/10.1134/s1063782612120068
Publikováno v:
Semiconductors. 46:184-187
The influence of defect formation upon the deposition of a Mn δ layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::573bedc17894ad0fee6c7898f1913cc6
https://doi.org/10.1134/s106378261202011x
https://doi.org/10.1134/s106378261202011x