Výsledky vyhledávání - "I. A. Belogorohov"

Raman spectroscopy study of the structure of gallium nitride epitaxial layers of different orientations

Autor: A. A. Yugov, I. A. Belogorohov, A. A. Donskov, T. G. Yugova, Yu. N. Parhomenko

Publikováno v: Crystallography Reports. 61:428-431

The composition nonstoichiometry and structural quality of undoped gallium nitride layers grown by the hydride vapor phase epitaxy on sapphire substrates of different orientations have been estimated using Raman spectroscopy. It is found for the firs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de53855943045a7759cc77e89249cd16
https://doi.org/10.1134/s1063774516030299

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Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

Autor: A. A. Donskov, V. F. Pavlov, Yu. P. Kozlova, T. G. Yugova, S. N. Knyazev, I. A. Belogorohov

Publikováno v: Crystallography Reports. 60:889-894

The structural quality and surface morphology of low-temperature (LT) buffer layers after deposition and high-temperature (HT) annealing and HT GaN layers grown on LT buffer layers by hydride vapor phase epitaxy have been investigated. The HCl flow r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::977e9f2540559805ad3b1e3735dd6584
https://doi.org/10.1134/s1063774515060036

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