Výsledky vyhledávání

Autor: J. Sabataityt, R.A. Bendorius, I. Šimkien, Vaidas Pačebutas, Alexei N. Baranov

Publikováno v: Materials Science and Engineering: C. 23:43-48

Single crystalline p-type GaSb was made porous by anodic etching in a hydrofluoric acid solution. The morphology, chemical composition and photoluminescence (PL) of the porous layer were investigated. It has been shown that the porous layer consists

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cd35121d74b01033f7b5300918729a48
https://doi.org/10.1016/s0928-4931(02)00223-0

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Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching

Autor: K Naudžius, R.A. Bendorius, J. Sabataityt, V. Jasutis, K. Grigoras, I. Šimkien, Vaidas Pačebutas, H. Tvardauskas

Publikováno v: Materials Science and Engineering: C. 19:155-159

Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM and optical methods. The morphology, chemical composition and photoluminescence of porous layers were investigated. It was shown that porous layer consists of Ga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3dd978a8ce8fa1d10b568304d73a3fac
https://doi.org/10.1016/s0928-4931(01)00475-1

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p–n Junction formed in structures with macro-porous silicon

Autor: V. Jasutis, K. Grigoras, Vaidas Pačebutas, J. Sabataityt, I. Šimkien

Publikováno v: Applied Surface Science. 166:532-537

Boron doped glasses, obtained from organic solution under low temperature and deposited by spin-on technique, were used to form a highly doped p+–n junction into structures with macro-porous silicon (PS) layer of 0.4–6 μm thickness. The junction

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3784112a952ed4e76f96f3dcfad241e7
https://doi.org/10.1016/s0169-4332(00)00488-8

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The room temperature ammonia sensor based on improved CuxS-micro-porous-Si structure

Autor: G. Mattogno, I Šimkien, Arūnas Šetkus, A. Mironas, V Strazdien, V. Janickis, I Ancutien, Gabriel Maria Ingo, Saulius Kaciulis, A. Galdikas

Publikováno v: Sensors and actuators. B, Chemical
78 (2001): 208–215. doi:10.1016/S0925-4005(01)00814-0
info:cnr-pdr/source/autori:A. Setkus, A. Galdikas, A. Mironas, V. Strazdiene, I. Simkiene, I. Ancutiene, V. Janickis, S. Kaciulis, G. Mattogno, G.M. Ingo/titolo:The room temperature ammonia sensor based on improved CuxS-micro-porous-Si structure/doi:10.1016%2FS0925-4005(01)00814-0/rivista:Sensors and actuators. B, Chemical (Print)/anno:2001/pagina_da:208/pagina_a:215/intervallo_pagine:208–215/volume:78

Ammonia sensitive structures based on CuxS film and micro-porous Si layer are produced and investigated. Resistance response to ammonia is measured in air at ambient temperatures 290-300 K and at higher ones with special heating up to 350 K. Detectab

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87ba060e92e878d0fadbcdf724d7f312
https://publications.cnr.it/doc/212088

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Hot electron conduction of PbTe and Pb1−xSnxTe

Autor: Arūnas Krotkus, A. Plytnikas, T. Lideikis, I. Šimkien

Publikováno v: Solid-State Electronics. 26:605-609

Experimental and theoretical studies have been made of electron transport and hot electron effects in PbTe and Pb 1−x Sn x Te as a function of alloy composition. Pulsed measurements of the current-voltage characteristics, Hall effect, and the poten

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a1940906ac8d7738578f92765d6ab252
https://doi.org/10.1016/0038-1101(83)90176-4

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Impurity absorption in indium-doped Pb1−xSnxTe

Autor: I. Šimkien, N. Šiktorov, T. Lideikis, A. Petraitien

Publikováno v: Solid State Communications. 57:583-585

Optical absorption spectra of indium doped Pb1−xSnxTe (x = 0–0.22) have been measured at 90 and 300 K. It was found that doping gives rise to a broad absorption band with its maximum at photon energies much greater than the thermal ionization ene

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac655addf23f19995fe2f520ffbf79b9
https://doi.org/10.1016/0038-1098(86)90326-1

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