Zobrazeno 1 - 10
of 53
pro vyhledávání: '"I.‐Hsing Tan"'
Publikováno v:
IEEE Journal of Quantum Electronics. 31:1863-1875
We discuss wavelength tuning and its corresponding quantum efficiency modulated by the standing wave effects in a resonant-cavity enhanced (RCE) photodetector. Specific design conditions are made for a thin In/sub 0.53/Ga/sub 0.47/As (900 /spl Aring/
Publikováno v:
Journal of Applied Physics. 75:3040-3044
We have studied the effects of hydrogenation on the luminescence efficiency of near‐surface strained InGaAs/GaAs and unstrained GaAs/AlGaAs quantum wells (QWs). By using two different materials with an analogous structure, we have been able to clar
Publikováno v:
Journal of Applied Physics. 74:5144-5148
The effect of the proximity of a bare barrier surface on the quantum efficiency of underlying GaAs/Al0.3Ga0.7As and In0.13Ga0.87As/GaAs quantum wells (QWs) is studied by low‐temperature photoluminescence. The quantum efficiency of the resonantly ex
Autor:
Richard P. Mirin, Arthur C. Gossard, Evelyn L. Hu, I‐Hsing Tan, John E. Bowers, Mohan Krishnamurthy
Publikováno v:
Journal of Crystal Growth. 127:881-886
Strained InGaAs quantum wires have been grown on holographically-patterned (100) GaAs substrates using alternating molecular beam epitaxy. Transmission electron micrographs reveal that the initial grating has rough sidewalls from wet-etching, but the
Publikováno v:
Journal of Applied Physics. 72:546-552
We have modeled the lateral quantum confinement in a GaAs quantum well due to partial strain release on the side walls of an InGaAs stressor located on the top of the well. We used the finite element method to solve both the continuum elasticity equa
Autor:
Evelyn L. Hu, I‐Hsing Tan, David G. Lishan, Takashi Yasuda, Ming Yuan He, James L. Merz, Richard P. Mirin, John E. Bowers, Anthony Evans
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:664-668
We have investigated strain‐induced lateral quantum confinement in a GaAs quantum well, as well as strain propagation along the material growth direction. The lateral confinement was generated by etching a grating pattern into a stressor of InGaAs
Autor:
Takashi Yasuda, Richard P. Mirin, Marilyn Leonard, Evelyn L. Hu, I‐Hsing Tan, Helge Weman, John E. Bowers
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:697-700
Strained InGaAs/GaAs quantum well wires have been grown on 2300 A period gratings etched into GaAs substrates. Both conventional molecular beam epitaxy and migration‐enhanced epitaxy have been used as growth techniques. The low‐temperature photol
Publikováno v:
Superlattices and Microstructures. 11:297-301
Quantized conductance is observed in a split gate structure at temperatures up to 30K and with bias voltages of up to 12mV. This work addresses the limited temperature range and signal levels of ballistic constrictions by a comprehensive design strat
Publikováno v:
Superlattices and Microstructures. 10:67-72
The concept of a Fabry-Perot etalon has been explicitly applied to the analysis of resonant tunneling structures. We have treated both single- and double-barrier structures with an applied electric field as equivalent Fabry-Perot etalons under the WK
Publikováno v:
IEEE Photonics Technology Letters. 10:135-137
We studied ultrafast transport dynamics of highspeed p-i-n photodetectors under high illumination using an electrooptic sampling technique. Under high illumination, saturation nonlinearities were found to be dominated by a space-charge-screening effe