Zobrazeno 1 - 10
of 36
pro vyhledávání: '"I-Chung Deng"'
Autor:
I-Chung Deng, 鄧一中
88
This thesis studies the barrier properties of the low pressure chemical vapor deposited tungsten film (CVD-W) and of low dielectric constant material as the dielectric layer of barrier metal-free structure for ultra-large-scale-integrated (UL
This thesis studies the barrier properties of the low pressure chemical vapor deposited tungsten film (CVD-W) and of low dielectric constant material as the dielectric layer of barrier metal-free structure for ultra-large-scale-integrated (UL
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/56348381114630846038
Publikováno v:
Solid-State Electronics. 111:7-11
This study demonstrated the application of a dual plasma treatment to low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) comprising a self-aligned phosphorus implantation source and drain, high-κ HfO2 gate dielectric, and alum
Publikováno v:
ECS Transactions. 45:211-218
High dielectric constant materials (high-k) such as Hf-based thin films are the promising candidates beyond 45-nm CMOS technology. It has been described that nitridation processes could improve thermal stability and dielectric constant of Hf-based di
Autor:
Chin-Jyi Wu, Chia-Chiang Chang, I-Chung Deng, Chia-Wei Chi, Sung-Hung Huang, Kow-Ming Chang, Chien-Hung Wu
Publikováno v:
ECS Transactions. 45:231-237
Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100oC, an
Autor:
I-Chung Deng, Je-Wei Lin, Chin-Jyi Wu, Chia-Chiang Chang, Kow-Ming Chang, Wei-Han Chiang, Chien-Hung Wu, Sung-Hung Huang
Publikováno v:
ECS Transactions. 45:189-197
We fabricated bottom gate TFTs with IGZO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of thermal annealing on the properties of IGZO TFTs was studied. After post annealing, the IGZO thin films showed a smooth and dens
Publikováno v:
ECS Transactions. 35:909-921
The incorporation of nitrogen in HfO2 gate dielectrics has been reported to be beneficial for electrical performance. The improvement in the electrical characteristics of HfO2 thin film with plasma nitridation process or plasma fluorination process h
Publikováno v:
Journal of the Chinese Institute of Engineers. 31:1095-1100
The experimental and simulated results for the proposed antenna are investigated in this article. Moreover, a novel broadband design of a circularly polarized (CP) single square slot antenna fed by a single coplanar waveguide is presented. By appropr
Publikováno v:
Microwave and Optical Technology Letters. 50:1423-1426
5. Conclusions A method for the efficient calculation of the whole radar cross- section pattern of infinite cylindrical shells with arbitrary cross section is presented. It has been shown that the computation time is independent of frequency. Accurac
Publikováno v:
Sensors and Actuators A: Physical. 134:660-667
In the surface micromachining technique, residual stress and sticking effect play an important role in determining whether a microstructure is suspended or collapse during a release process. In this paper, we propose a simpler method for making suspe
Publikováno v:
Microwave and Optical Technology Letters. 49:1684-1687
The design of a circularly polarized slot antenna fed by a single microstrip line is presented. The circularly polarized radiation is achieved by means of using a shorted square-ring slot. This proposed antenna has the fundamental resonant frequency