Zobrazeno 1 - 4
of 4
pro vyhledávání: '"I V Vasilishcheva"'
Publikováno v:
Soviet Journal of Quantum Electronics. 15:1201-1204
The diffusion of selenium in CdS was used to fabricate planar and strip waveguides with losses in the range 3–5 dB/cm at the wavelength of 0.63 μ. A study was made of the influence of the diffusion conditions on the main waveguide parameters. A ma
Publikováno v:
Soviet Journal of Quantum Electronics. 12:1514-1516
The diffusion method was used to fabricate CdSxSe1–x solid-solution waveguides with losses in the range 9–13 dB/cm. The refractive index profile of these waveguides was determined. Photochemical etching of the waveguide surface was employed to fo
Autor:
V N Poluboyarov, V A Trufan, R M Savvina, G G Skrotskaya, V M Zubkov, N F Starodubtsev, I V Vasilishcheva, O N Talenskiĭ
Publikováno v:
Soviet Journal of Quantum Electronics. 13:1407-1408
Cadmium sulfide crystals with a disturbed surface layer about 5 μ thick were annealed by KrF* laser pulses of 10 nsec duration. This improved the crystal structure when the cadmium side was irradiated. The effect was not detectable on the sulfur sid
Publikováno v:
Soviet Journal of Quantum Electronics. 16:441-441