Zobrazeno 1 - 8
of 8
pro vyhledávání: '"I V Vasilishcheva"'
Publikováno v:
Soviet Journal of Quantum Electronics. 15:1201-1204
The diffusion of selenium in CdS was used to fabricate planar and strip waveguides with losses in the range 3–5 dB/cm at the wavelength of 0.63 μ. A study was made of the influence of the diffusion conditions on the main waveguide parameters. A ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1167921d50143270b4f771e11d55c2b6
https://doi.org/10.1070/qe1985v015n09abeh007659
https://doi.org/10.1070/qe1985v015n09abeh007659
Publikováno v:
Soviet Journal of Quantum Electronics. 12:1514-1516
The diffusion method was used to fabricate CdSxSe1–x solid-solution waveguides with losses in the range 9–13 dB/cm. The refractive index profile of these waveguides was determined. Photochemical etching of the waveguide surface was employed to fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc3aeb809c138f77b60aa159062072a8
https://doi.org/10.1070/qe1982v012n11abeh006179
https://doi.org/10.1070/qe1982v012n11abeh006179
Autor:
V N Poluboyarov, V A Trufan, R M Savvina, G G Skrotskaya, V M Zubkov, N F Starodubtsev, I V Vasilishcheva, O N Talenskiĭ
Publikováno v:
Soviet Journal of Quantum Electronics. 13:1407-1408
Cadmium sulfide crystals with a disturbed surface layer about 5 μ thick were annealed by KrF* laser pulses of 10 nsec duration. This improved the crystal structure when the cadmium side was irradiated. The effect was not detectable on the sulfur sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ca8a8aca629eab2c72067258122bf2
https://doi.org/10.1070/qe1983v013n10abeh004932
https://doi.org/10.1070/qe1983v013n10abeh004932
Publikováno v:
Soviet Journal of Quantum Electronics. 16:441-441
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed2396d265c11e0a31cc904acd46fb16
https://doi.org/10.1070/qe1986v016n03abeh006147
https://doi.org/10.1070/qe1986v016n03abeh006147
Autor:
Vasilishcheva, I V, Zubkov, V M, Savvina, R M, Skrotskaya, G G, Starodubtsev, N F, Talenskiĭ, O N, Poluboyarov, V N, Trufan, V A
Publikováno v:
Soviet Journal of Quantum Electronics; Oct1983, Vol. 13 Issue 10, p1407-1408, 2p
Autor:
Buachidze, É É, Vasilishcheva, I. V., Morozov, V. N., Pletnev, V. A., Semenov, A. S., Shapkin, P. V.
Publikováno v:
Soviet Journal of Quantum Electronics; 1985, Vol. 15 Issue 9, p1-1, 1p
Autor:
Werner Kern, John L. Vossen
This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with i
Autor:
Maurice H. Francombe, John L. Vossen
Physics of Thin Films: Advances in Research and Development primarily deals with the influence of ions or optical energy on the deposition, properties, and etching on thin films. The book is a collection of five articles, with one article per chapter