Zobrazeno 1 - 10
of 153
pro vyhledávání: '"I V Shtrom"'
Publikováno v:
Semiconductors. 56:14-17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95ee88504019ec8616cde99206224310
https://doi.org/10.1134/s1063782622010134
https://doi.org/10.1134/s1063782622010134
Autor:
G. E. Cirlin, Rodion R. Reznik, A. I. Khrebtov, I. D. Skurlov, I. V. Shtrom, A. S. Kulagina, A. P. Litvin, V. V. Danilov, E. S. Gromova
Publikováno v:
Semiconductors. 54:1141-1146
The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44be6331e15eed32eb484904ab1f700d
https://doi.org/10.1134/s1063782620090158
https://doi.org/10.1134/s1063782620090158
Autor:
S A Kadinskaya, V M Kondratev, I K Kindyushov, M E Labzovskaya, B V Novikov, I V Shtrom, A I Lihachev, A V Nashchekin, A D Bolshakov
Publikováno v:
Journal of Physics: Conference Series. 2227:012007
In this work we study zinc oxide nanostructures of various geometries synthesized via the hydrothermal technique on Si (111) substrate. We demonstrate capabilities of the growth protocol for control over the morphology of nanostructures varying from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075e26be2a056f7ec01a7e63f43ac58b
https://doi.org/10.1088/1742-6596/2227/1/012007
https://doi.org/10.1088/1742-6596/2227/1/012007
Autor:
K. Yu. Shubina, S. N. Timoshnev, Ekaterina V. Nikitina, I. V. Shtrom, M. S. Sobolev, T. N. Berezovskaia, A. M. Mizerov, A. D. Bouravleuv
Publikováno v:
Semiconductors. 52:1529-1533
The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d06863be047b6922854e17a8ee56e007
https://doi.org/10.1134/s1063782618120175
https://doi.org/10.1134/s1063782618120175
Autor:
A. I. Khrebtov, Yu. B. Samsonenko, E. V. Ubiivovk, I. V. Shtrom, N. V. Sibirev, G. E. Cirlin, R. R. Reznik, A. D. Bouravleuv
Publikováno v:
Semiconductors. 52:1-5
A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b930ca093626784f13fa98548789a8
https://doi.org/10.1134/s1063782618010219
https://doi.org/10.1134/s1063782618010219
Autor:
K. P. Kotlyar, A. V. Osipov, I. V. Shtrom, I. P. Soshnikov, G. E. Cirlin, S. A. Kukushkin, Rodion R. Reznik
Publikováno v:
Semiconductors. 51:1472-1476
The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of simil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c193a101de0dbc2f1e759e6c7fa7e1
https://doi.org/10.1134/s1063782617110252
https://doi.org/10.1134/s1063782617110252
Autor:
L. Leonardo, Takeshi Kasama, I. V. Shtrom, G. E. Cirlin, Rodion R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, Nika Akopian, S. A. Kukushkin
Publikováno v:
Semiconductors. 52:462-464
III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1cb1d7043aa6d5148f6afa2552e9cf5
https://doi.org/10.1134/s1063782618040103
https://doi.org/10.1134/s1063782618040103
Autor:
A. E. Zhukov, G. E. Cirlin, A. I. Khrebtov, I. V. Shtrom, I. P. Soshnikov, N. V. Kryzhanovskaya, Eduard Moiseev, R. R. Reznik
Publikováno v:
Technical Physics Letters. 44:112-114
Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c21952718f4787d2b919866fa954ea
https://doi.org/10.1134/s1063785018020116
https://doi.org/10.1134/s1063785018020116
Autor:
I. V. Shtrom, I. P. Soshnikov, G. E. Cirlin, Rodion R. Reznik, A. I. Khrebtov, A. D. Bouravleuv, Yu. B. Samsonenko
Publikováno v:
Semiconductors. 50:1421-1424
Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373a9ae3834ead66fc10db155def79ec
https://doi.org/10.1134/s1063782616110257
https://doi.org/10.1134/s1063782616110257
Autor:
A. I. Khrebtov, Alexander Pyymaki Perros, A. D. Bouravleuv, Harri Lipsanen, R. R. Reznik, Yu. B. Samsonenko, G. E. Cirlin, Veer Dhaka, I. V. Shtrom, I. P. Soshnikov
Publikováno v:
Semiconductors. 50(12):1619-1621
It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fda9039c5b89face334634813f33e82
http://juuli.fi/Record/0277878016
http://juuli.fi/Record/0277878016