Zobrazeno 1 - 10
of 16
pro vyhledávání: '"I V Sagunova"'
Autor:
Sergey Kozyukhin, M. E. Fedyanina, Alexey Sherchenkov, V. S. Levitskii, A. O. Yakubov, I. V. Sagunova, Petr Lazarenko, Yu. V. Vorobyov, A. A. Dedkova
Publikováno v:
Semiconductors. 54:1775-1783
—Extensive studies of Ge2Sb2Te5 material are associated with the possibility of producing multilevel nonvolatile elements for high-speed integrated optical functional circuits. The principle of multilevel recording in such devices is based on the f
Autor:
Petr Lazarenko, Elena Kirilenko, I. V. Sagunova, A. O. Yakubov, Alexey Sherchenkov, A. V. Babich
Publikováno v:
Journal of Thermal Analysis and Calorimetry. 142:1019-1029
The influence of the adjacent layers (SiO2, Al, Ni, Ti, W, TiN, TiN/W) on the crystallization kinetics of Ge2Sb2Te5 thin films was investigated using the techniques based on the application of two different methods—differential scanning calorimetry
Autor:
V. S. Levitskii, A. O. Yakubov, A. A. Dedkova, I. V. Sagunova, P.I. Lazarenko, Yu.V. Vorobyev, S.A. Kozyukhin, M. E. Fedyanina, Alexey Sherchenkov
Publikováno v:
Proceedings of Universities. ELECTRONICS. 25:203-218
Autor:
I. V. Sagunova, M. E. Fedyanina, Alexey Sherchenkov, A. O. Yakubov, A. V. Kukin, Petr Lazarenko, Yu. V. Vorobyov, Yu. S. Sybina, Sergey Kozyukhin
Publikováno v:
Inorganic Materials: Applied Research. 11:330-337
The method of spectrophotometry with transmission and reflection spectra recording is used to study the peculiarities of estimating the optical band gap in Ge2Sb2Te5 thin films after annealing at different temperatures, in particular, in the temperat
Autor:
Yu. S. Sybina, M. E. Fedyanina, A. O. Yakubov, Alexey Sherchenkov, Petr Lazarenko, Sergey Kozyukhin, A. V. Kukin, Yu. V. Vorobyov, I. V. Sagunova
Publikováno v:
Perspektivnye Materialy. :14-25
Autor:
I. V. Sagunova, Petr Lazarenko, E. N. Redichev, A. V. Babich, Sergey Kozyukhin, N. A. Bogoslovskiy, Alexey Sherchenkov
Publikováno v:
Semiconductors. 51:146-152
The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors Ge2Sb2Te5, GeSb2Te5, and GeSb4Te7 are investigated. Th
Publikováno v:
2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus).
The paper presents the results of a study of piezoelectric polymer films P(VDF-TrFE) for using by the registration of partial discharge. Elastic polymer layers could be as placed on complex surfaces as formed on them. It is shown that with the use of
Publikováno v:
2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus).
In this paper, a new approach to combined 2D printing of local layers of different materials on the same set up have been considered. A three-coordinate moving system has been developed, equipped with a heated table, a system for supplying precursors
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 475:012021
Publikováno v:
SPIE Proceedings.
The article dwells upon theoretical considerations on the nature of probe local anodic oxidation. The concept of the process presented here allows for the device intrinsic amperage limitations in the tip-sample system. The work also demonstrates char