Zobrazeno 1 - 10
of 87
pro vyhledávání: '"I Trimaille"'
Autor:
Marine Bossert, I. Trimaille, L. Cagnon, B. Chabaud, C. Gueneau, P. Spathis, P. E. Wolf, E. Rolley
Publikováno v:
Proceedings of the National Academy of Sciences. 120
We have studied homogeneous cavitation in liquid nitrogen and normal liquid helium. We monitor the fluid content in a large number of independent mesopores with an ink-bottle shape, either when the fluid in the pores is quenched to a constant pressur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aac28869b327539ea6e2d296fb41214
https://doi.org/10.1073/pnas.2300499120
https://doi.org/10.1073/pnas.2300499120
Akademický článek
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Akademický článek
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Publikováno v:
The Journal of Physical Chemistry B. 103:9910-9914
The oxygen exchange reactions can give valuable information concerning the oxidation mechanisms since they can be intermediate reactions. During dry thermal oxidation of silicon there are at least two different oxygen exchange reactions: oxygen excha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b7eab7fdd5eba66857847067ce57b8d
https://doi.org/10.1021/jp991788e
https://doi.org/10.1021/jp991788e
Autor:
I. Vickridge, J.-J. Ganem, J. L. Cantin, T. Åkermark, H. J. von Bardeleben, S. Rigo, I. Trimaille, L. G. Gosset
Publikováno v:
Scopus-Elsevier
The modification by postoxidation NO treatments of the Si/SiO2 interface in thermally grown Si(100)/SiO2 layers has been studied by nuclear reaction analysis and electron paramagnetic resonance spectroscopy. Our results demonstrate a selective incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08b3fbda3214c4cae6032892ae00879e
https://doi.org/10.1063/1.369730
https://doi.org/10.1063/1.369730
Autor:
J.-J. Ganem, I. Trimaille
Publikováno v:
Silicon Technologies: Ion Implantation and Thermal Treatment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc564d31fdadc6ea777d0d3f80694e5c
https://doi.org/10.1002/9781118601044.ch1
https://doi.org/10.1002/9781118601044.ch1
Autor:
Israel Jacob Rabin Baumvol, I.F. Oppenheim, Fernanda Chiarello Stedile, J.-J. Ganem, S. Rigo, I. Trimaille
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 118:493-498
We determined the areal density of Si atoms constituting the oxide-silicon interface and the stoichiometry of ultra-thin silicon oxide films, thermally grown on Si(001) in dry 18 O 2 atmospheres, using the channeling of α-particles along the 〈001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da067c77ca046e2b6489a7d8c70e85c0
https://doi.org/10.1016/0168-583x(95)01184-6
https://doi.org/10.1016/0168-583x(95)01184-6
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 99:462-467
By means of isotopic tracing of nitrogen and hydrogen we studied the atomic transport mechanisms during the thermal growth of silicon nitride films in ammonia ( 14 NH 3 , 15 NH 3 and 14 ND 3 ). The total amounts and the depth profiles of the differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bc626bd65cdd637f60d36bb3a23991e
https://doi.org/10.1016/0168-583x(95)00211-1
https://doi.org/10.1016/0168-583x(95)00211-1
Autor:
G. E. Mitchell, G Amsel, M. Buschmann, C Angulo, H. Ebbing, W.H. Schulte, Markus Berheide, G Battistig, Jeffrey Schweitzer, I Trimaille, C Rolfs, H.W. Becker
Publikováno v:
Vacuum. 44:185-190
The application of proton-induced narrow resonances in nuclear reactions as probes for depth profiling near-surface regions of solids has been investigated at projectile energies below 400 keV. The measurements were performed at the Universitat Munst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a738eccadb593f354a71df64df589c57
https://doi.org/10.1016/0042-207x(93)90151-y
https://doi.org/10.1016/0042-207x(93)90151-y
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 64:784-788
The aim of this study is to quantify the effects of different treatments generally used in the preparation of silicon for the rapid thermal processing (RTF). The atomic quantities of oxygen were determined by nuclear reaction analysis (NRA) using the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f1c31fa9d6b72ff91fe7449c6a5ef8e
https://doi.org/10.1016/0168-583x(92)95578-f
https://doi.org/10.1016/0168-583x(92)95578-f