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Characterization of Crystalline Structure and Morphology of Ga2O3 Thin Film Grown by MOCVD Technique
Publikováno v:
Key Engineering Materials. 721:253-257
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7f3d96a7fe06440651f7342f0063e7c
https://doi.org/10.4028/www.scientific.net/kem.721.253
https://doi.org/10.4028/www.scientific.net/kem.721.253
Autor:
Mikhail Chubarov, Jelena Butikova, Robert Kalendarjov, Aleksej Muhin, G. Marcins, Georgy Chikvaidze, Pavel Birjukov, I. Tale, Boris Polyakov
Publikováno v:
Energy Procedia. 3:42-45
Pure amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by picosecond UV laser pulses. The Raman scattering spectra show that pulse energy of 330 mJ/cm2 is enough to fully crystallize Si film and further incr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::add417ee88ce8feb7dbb7a9a88109762
https://doi.org/10.1016/j.egypro.2011.01.007
https://doi.org/10.1016/j.egypro.2011.01.007
Autor:
A. Sarakovskis, O. Lielausis, A. Alekseyv, R.B. Gomes, Carlos A. Silva, P. Duarte, C.A.F. Varandas, A. Klyukin, T. Pereira, A. Soares, João Figueiredo, I. Tale, Bernardo B. Carvalho, E. Platacis, Horacio Fernandes
Publikováno v:
Journal of Nuclear Materials. :938-941
Liquid metals have been pointed out as a suitable solution to solve problems related to the use of solid walls submitted to high power loads allowing, simultaneously, an efficient heat exhaustion process from fusion devices. The most promising candid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e8588dec730060b1dfe1a478fc3f6b0
https://doi.org/10.1016/j.jnucmat.2009.01.240
https://doi.org/10.1016/j.jnucmat.2009.01.240
Publikováno v:
Latvian Journal of Physics and Technical Sciences. 46:50-54
PATTERNED LASER CRYSTALLIZATION OF a-SiThin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7d1217534794bf6db8b5c58110d8943
https://doi.org/10.2478/v10047-009-0009-y
https://doi.org/10.2478/v10047-009-0009-y
Publikováno v:
Latvian Journal of Physics and Technical Sciences, Vol 46, Iss 1, Pp 44-48 (2009)
Rapid Annealing of Black ZnO Thin Films Prepared by Pulsed Laser DepositionZnO thin films were deposited by pulsed laser deposition (fluence 2.2 J/cm2) in vacuum on different substrates kept at room temperature. This temperature allowed for fast film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04b66398b96951334f1cc782dfe59702
https://doi.org/10.2478/v10047-009-0003-4
https://doi.org/10.2478/v10047-009-0003-4
Autor:
A. Sarakovskis, I. Tale, A. Soares, A. Klyukin, R.B. Gomes, E. Platacis, Horacio Fernandes, O. Lielausis, Bernardo B. Carvalho, C.A.F. Varandas, João Figueiredo, Carlos A. Silva, T. Pereira
Publikováno v:
Fusion Engineering and Design. 83:102-111
The interaction of a liquid gallium jet with plasma has been investigated in the tokamak ISTTOK. This paper presents a description of the conceived experimental setup, a detailed characterization of the produced jets and the first experimental result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ad72def2a392341b90a19e7294eafe5
https://doi.org/10.1016/j.fusengdes.2007.08.019
https://doi.org/10.1016/j.fusengdes.2007.08.019
Autor:
L. Dimitrocenko, G. Marcins, I. Tale, Maris Springis, J. Grube, A. Sarakovskis, P. Kulis, Boris Polyakov
Publikováno v:
Latvian Journal of Physics and Technical Sciences, Vol 45, Iss 4, Pp 25-32 (2008)
AlGaN-InGaN-GaN Near Ultraviolet Light Emitting DiodeA 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53e97d8c2ad80e6c02d4503a3ef06c86
https://doi.org/10.2478/v10047-008-0017-3
https://doi.org/10.2478/v10047-008-0017-3
Autor:
Andris Gulans, I. Tale
Publikováno v:
physica status solidi c. 4:1197-1200
Ab initio calculations of wurtzite-type GaN nanowires have been performed using density functional theory. Different shapes of nanowires of with similar diameters of around 2 nm have been considered to determine the stability of the structures. The q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a483e505af4bc4dcb960156275ad4c12
https://doi.org/10.1002/pssc.200673848
https://doi.org/10.1002/pssc.200673848
Autor:
I. Tale, Andris Gulans, Uldis Rogulis, Noboru Ichinose, E. Elsts, Kiyoshi Shimamura, A. Fedotovs, Martin Nikl
Publikováno v:
physica status solidi c. 4:1284-1287
We studied EPR spectra of pure LiBaF3 sample of high quality. For EPR measurements LiBaF3 sample was X-irradiated at room temperature, however spectra could be observed at low temperatures - at 77 K. All hyperfine structure lines of F-type centre cou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8019f2f4a49072a2f595c39dafc273d9
https://doi.org/10.1002/pssc.200673812
https://doi.org/10.1002/pssc.200673812