Zobrazeno 1 - 10
of 67
pro vyhledávání: '"I T Serenkov"'
Autor:
V. I. Sakharov, I. T. Serenkov
Publikováno v:
Technical Physics. 66:155-160
The possibilities of using medium-energy (hundreds of kiloelectronvolts) ion beams for diagnostics of solids by measuring the spectra of characteristic X-ray radiation are considered. A modification of the method is proposed that consists in using pr
Autor:
E. I. Shek, E. V. Fomin, A. E. Kalyadin, K. V. Karabeshkin, A. D. Bondarev, E. V. Sherstnev, V. I. Sakharov, N. A. Sobolev, V. M. Mikoushkin, I. T. Serenkov
Publikováno v:
Semiconductors. 53:415-418
The concentration profiles of defects produced in structures upon the implantation of nitrogen ions into GaAs epitaxial layers with an uncovered surface and that covered with an AlN film and subsequent annealing are studied. The ion energies and the
Autor:
V. I. Sakharov, I. T. Serenkov, E. I. Shek, N. A. Sobolev, A. E. Kalyadin, E. O. Parshin, N. S. Melesov, C. G. Simakin
Publikováno v:
Semiconductors. 53:156-159
The influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Rutherford backscattering of medium- and high-
Autor:
V. I. Sakharov, V. V. Afrosimov, A. A. Odinets, M. V. Zlygostov, I. T. Serenkov, Andrey Tumarkin
Publikováno v:
Physics of the Solid State. 60:2091-2096
The initial stages of growth of barium zirconate titanate and barium stannate titanate ferroelectric films on single-crystal sapphire and silicon carbide are studied for the first time. The choice of substrates is dictated by the possibility of using
Publikováno v:
Physics of the Solid State. 60:1235-1238
Comparison of the channel spectra of medium energy ion scattering, visualized for LaAlO3/(001)SrTiO3 heterostructures with a thickness of the lanthanum aluminate layer of one to six unit cells, indicates that the lanthanum aluminate layer grows coher
Publikováno v:
Physics of the Solid State. 60:173-177
The medium-energy ion scattering (MEIS) spectroscopy was used to obtain the data on the structure and stoichiometry of interfaces in LaAlO3/SrTiO3 (LAO/STO) heterostructures. The coverage of the LAO/STO heterostructure with a LAO film increased by a
Autor:
A. E. Kalyadin, N. A. Sobolev, V. I. Sakharov, E. O. Parshin, I. T. Serenkov, O. V. Aleksandrov, N. S. Melesov, E. I. Shek
Publikováno v:
Semiconductors. 53:153-155
The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor cen
Autor:
I. T. Serenkov, V. I. Sakharov, S. V. Razumov, A. A. Odinets, E. N. Sapego, V. V. Afrosimov, M. V. Zlygostov, Andrey Tumarkin
Publikováno v:
Physics of the Solid State. 59:2374-2380
The initial stages of the growth of ferroelectric barium strontium titanate films on single-crystal silicon carbide substrates have been studied for the first time. The choice of a substrate with high thermal conductivity has been due to the possibil
Publikováno v:
Physics of the Solid State. 58:2560-2566
Structure of 40-nm thick La0.67Ca0.33MnO3 (LCMO) films grown by laser evaporation on (001) and (110) LaAlO3 (LAO) substrates has been investigated using the methods of medium-energy ion scattering and X-ray diffraction. The grown manganite layers are
Autor:
B. Ya. Ber, E. V. Sherstnev, Elena I. Shek, D. Yu. Kazantsev, V. M. Mikoushkin, I. T. Serenkov, Nikolai A. Sobolev, V. I. Sakharov, K. V. Karabeshkin, N. M. Shmidt, A. E. Kalyadin
Publikováno v:
Technical Physics Letters. 44:574-576
Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N+ ions at doses of 5 × 1014