Zobrazeno 1 - 10
of 385
pro vyhledávání: '"I Suemune"'
Publikováno v:
Advances in Mathematical Physics, Vol 2010 (2010)
Single-photon as well as polarization-correlated photon pair emission from a single semiconductor quantum dots is demonstrated. Single photon generation and single photon-pair generation with little uncorrelated multiphoton emission and the feasibili
Externí odkaz:
https://doaj.org/article/9316faf3e7a446d7b4ecbc02cdb28e08
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba55d84c0f4ef09566dba10e80f6172a
https://doi.org/10.1201/9781351074629-41
https://doi.org/10.1201/9781351074629-41
Autor:
T. Mano, Kazuaki Sakoda, X. Liu, N. Ha, I. Suemune, H. Kumano, H. Nakajima, R. Takemoto, Hiroyuki Kurosawa, Takashi Kuroda
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94167178a73c0479bcfed33b00cd37b3
https://doi.org/10.7567/ssdm.2015.h-6-4
https://doi.org/10.7567/ssdm.2015.h-6-4
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c474fcee113f7548db0619888aa2014c
https://doi.org/10.7567/ssdm.2013.ps-9-2
https://doi.org/10.7567/ssdm.2013.ps-9-2
Publikováno v:
IEE Proceedings - Optoelectronics. 151:328-330
Optical properties of the GaAsNSe/GaAs superlattice (SL) were investigated using piezoelectric photothermal (PPT) and photoluminescence (PL) spectroscopies. The sample was grown by metalorganic molecular beam epitaxy on a semi-insulating (SI-)GaAs su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e957411e2baa4e74bdeb6d5fe5c34c8
https://doi.org/10.1049/ip-opt:20040869
https://doi.org/10.1049/ip-opt:20040869
Autor:
I. Suemune, Y. Asano, K. Tanaka, R. Inoue, H. Takayanagi, H. Sasakura, T. Akazaki, H. Kumano, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
AIP Conference Proceedings.
Potential of generating entangled photon pairs from a Cooper‐pair light emitting diode is demonstrated with experimental and theoretical studies.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc7bd7af07287834ae2f58799ddbb236
https://doi.org/10.1063/1.3666428
https://doi.org/10.1063/1.3666428
Publikováno v:
AIP Conference Proceedings.
Transport properties of a superconductor‐semiconductor junction with superlattice structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio‐frequency (RF) waves. Experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af2591be451b744545e2bcb9558221fe
https://doi.org/10.1063/1.3666413
https://doi.org/10.1063/1.3666413
Autor:
Maurizio Dabbicco, Y. Kuroda, Maria Lepore, R. Cingolani, Gaetano Scamarcio, Michele Ferrara, I. Suemune
Publikováno v:
Physica B: Condensed Matter. 185:352-356
Radiative recombination processes in highly excited ZnSe/ZnS 0.18 Se 0.82 multiple-quantum-well structures have been investigated as a function of the well width and of the lattice strain. Excitonic scattering processes dominate the photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a810d214213ccf3472121949681b4973
https://doi.org/10.1016/0921-4526(93)90260-d
https://doi.org/10.1016/0921-4526(93)90260-d
Autor:
H, Sasakura, S, Kuramitsu, Y, Hayashi, K, Tanaka, T, Akazaki, E, Hanamura, R, Inoue, H, Takayanagi, Y, Asano, C, Hermannstädter, H, Kumano, I, Suemune
Publikováno v:
Physical review letters. 107(15)
We experimentally demonstrate Cooper pairs' drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::af6b6e6b2e852a926be8ef572f9eb1a4
https://pubmed.ncbi.nlm.nih.gov/22107319
https://pubmed.ncbi.nlm.nih.gov/22107319
Autor:
Jordi Ibáñez, Ramón Cuscó, D. Fowler, K. Uesugi, Luis Artús, I. Suemune, Esther Alarcon-Llado, Amalia Patanè
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
We use Raman scattering to study the LO–plasmon coupled modes (LOPCMs) of n-type GaAs1−x N x epilayers grown by molecular beam epitaxy (0.1% ≤ x ≤ 0.36%). We find that the LOPCMs are heavily damped in n-GaAs1−x N x even for x as low as 0.1%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ac9b8d9d9195211035b28a8b0172606
http://hdl.handle.net/10261/20972
http://hdl.handle.net/10261/20972