Zobrazeno 1 - 10
of 15
pro vyhledávání: '"I S.T. Tsong"'
Autor:
R. Z. Bakhtizin, Q. Z. Xue, Yukio Hasegawa, I. S.T. Tsong, Takemaro Sakurai, Takahisa Ohno, Qi-Kun Xue
Publikováno v:
Physical Review Letters. 82:3074-3077
Various reconstructions on the GaN(0001) surface are studied by scanning tunneling microscopy (STM). Based on the comparison between the STM observations and first-principles total-energy calculations, we propose an adatom scheme for the basic $2\ifm
New normal coordinate calculations were used to relate the vibrational frequencies of silicate glasses to Si-O force constants. These appear to account for the observed frequency shifts with degree of silica polymerization. Raman spectroscopy has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92875e3c2784706c7e9d765ab6e5cb26
https://doi.org/10.2172/5419296
https://doi.org/10.2172/5419296
Autor:
I S.T. Tsong, R Messier
During this third quarter effort has been directed toward the characterization of a series of thin films prepared during the first half of this contract in which the primary variable parameters are the total gas pressure (Ar + H/sub 2/ as expressed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e70fc8b4a86e5401172c632d51ca45f
https://doi.org/10.2172/6884847
https://doi.org/10.2172/6884847
Autor:
I S.T. Tsong, R Messier
Sputtering preparation experiments were extended to include variations in the partial pressures of H/sub 2/ and Ar. A significant result is the demonstration of the wide control of Si-H bonding by variations in the sputtering gas pressure. Sputtered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59afe5513897d30003b6e7e259e17cbf
https://doi.org/10.2172/6668202
https://doi.org/10.2172/6668202
Autor:
R Messier, I S.T. Tsong
Hydrogenated a-Si solar cells were prepared by rf-sputtering. It was found that for a-Si the surface microstructure of sputtered films can be altered by a simple post-deposition etching process and controlled by varying the film preparation condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1438511e8635710ee639cc55d73087e
https://doi.org/10.2172/5930877
https://doi.org/10.2172/5930877
Autor:
I S.T. Tsong, R Messier
Aa a first step in attempting to understand the many interrelated deposition processes and film characteristics which govern sputter deposited a-Si:H film quality, a number of important basic film characteristics as a function of the preparation para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45c58c1b6fcfc1cd563b102b5b4ccef7
https://doi.org/10.2172/6618064
https://doi.org/10.2172/6618064
Autor:
Revie, R. Winston
Publikováno v:
Uhlig's Corrosion Handbook; 2011, p399-419, 21p
Publikováno v:
Nitride Semiconductors: Handbook on Materials & Devices; 2003, p45-106, 62p
Publikováno v:
Nitride Semiconductors: Handbook on Materials & Devices; 2003, p295-318, 24p
Publikováno v:
Nitride Semiconductors: Handbook on Materials & Devices; 2003, p241-294, 54p