Zobrazeno 1 - 10
of 13
pro vyhledávání: '"I S Polukhin"'
Autor:
S A Degtiareva, D S Shiryaev, Y S Andreev, I S Polukhin, E A Kondratieva, I G Smirnova, V E Bougrov
Publikováno v:
Journal of Physics: Conference Series. 2086:012080
The monitoring is integral part for patients with chronic disorders, as such cases require serious attention to save their life and predict recovery. Physiological signs such as heart rate, hemodynamic, temperature, saturation are collected from biom
Publikováno v:
Technical Physics Letters. 42:471-474
Topological parameters of a strip-geometry laser with passive mode-locking on the basis of an InGaAlAs/InGaAs/InP heterostructure are determined from the condition for the existence of one transverse mode in a strip waveguide. The strip width was 1.5
Autor:
S. A. Degtiareva, E. A. Kondratieva, V. E. Bougrov, I. G. Smirnova, Y. S. Andreev, I. S. Polukhin
Publikováno v:
Journal of Physics: Conference Series. 1697:012172
Due to the development of high technologies, there is a need to use computer systems to support the increasingly complex types of human activities. It provides high accuracy and speed of various research and medical examinations. Taking into account
Autor:
I. S. Polukhin, M. A. Odnoblyudov, Vladislav E. Bougrov, A. I. Borodkin, I. A. Krasavtsev, E. Z. Gareev, O. A. Kozyreva
Publikováno v:
Journal of Physics: Conference Series. 1410:012098
We developed wireless visible light simplex data transmission channel and error correction algorithm for the reciever. The system was design specially for using modern smartphone device as a receiver and a conventional domestic LED illuminator as tra
Autor:
A. I. Borodkin, I. S. Polukhin, Vladislav E. Bougrov, Maxim A. Odnoblyudov, D. S. Shiryayev, E. Z. Gareev, O. A. Kozyreva, I. A. Krasavtsev, Sergey A. Shcheglov
Publikováno v:
Journal of Physics: Conference Series. 1326:012030
We analyze the wireless visible light simplex data transmission channel based on visible light communication (VLC) technology and determine 2 main types of errors that occur while using a modern smartphone as a receiver. We have calculated highest pr
Autor:
Maxim A. Odnoblyudov, Vladislav E. Bougrov, O. A. Kozyreva, A. I. Borodkin, I. S. Polukhin, D V Kondakov, Sergey A. Shcheglov, Daniil S. Shiryaev, Y A Matveev, E. Z. Gareev
Publikováno v:
Journal of Physics: Conference Series. 1236:012085
We developed a wireless duplex communication system using visible light communication concept. In this work we investigated a downlink data transmission channel. We modelled the optical configuration of the system, calculated optical losses, fabricat
Publikováno v:
Technical Physics Letters. 40:453-455
The possibility of the thermovoltaic effect in a samarium sulfide (SmS) sample of stoichiometric composition that has experienced undergone deformation under the effect of a spherical indenter has been experimentally studied in a temperqature interva
Autor:
Maxim A. Odnoblyudov, I. I. Novikov, I. S. Polukhin, Vladislav E. Bougrov, O. A. Kozyreva, A. Yu. Egorov, E. S. Kolodeznyi, E. Z. Gareev, Y V Solov’ev, L. Ya. Karachinsky, G A Mikhailovskiy, A. K. Mikhailov
Publikováno v:
Journal of Physics: Conference Series. 917:052029
We have fabricated the 1.3-1.55 um PIN photodetector based on InGaAs/InP heterostructure. Measurement results of optical and electrical characteristics of PIN photodetector chip were the following: photoconductivity at 1550 nm was 0.65 A/W and intern
Autor:
A.A. Efremov, Y V Solov’ev, A.N. Kirsyaev, I. S. Polukhin, A.E. Gubenko, Maxim A. Odnoblyudov, D.A. Livshits, Vladislav E. Bougrov, D. A. Rybalko, G A Mikhailovskiy, A.N. Firsov
Publikováno v:
Journal of Physics: Conference Series. 741:012079
We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. N
Publikováno v:
Journal of Physics: Conference Series. 690:012019
The Zn x Cd1-x Te films with x = 0 ÷ 0.97 are grown by vacuum deposition in quasiequilibrium conditions on single crystal Si (111) substrates. The details of the growth process were analyzed. The possibilities of the quasi-closed volume method for p