MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

Autor: R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, A. I. Khrebtov, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, E. V. Nikitina, G. E. Cirlin

Publikováno v: Advances in Condensed Matter Physics, Vol 2018 (2018)

The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs with

Externí odkaz: https://doaj.org/article/1075ccf793d04c9ab9e5c732c9417851

Formation of Hexagonal Ge Stripes on the Side Facets of AlGaAs Nanowires: Implications for Near-Infrared Detectors

Autor: I. P. Soshnikov, Konstantin P. Kotlyar, Sergey V. Mikushev, Vladimir G. Dubrovskii, Demid A. Kirilenko, Andrey V. Osipov, Igor V. Ilkiv, G. E. Cirlin

Publikováno v: ACS Applied Nano Materials. 4:7289-7294

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf1c62ac64ac2de42508ed1270a4f9fb
https://doi.org/10.1021/acsanm.1c01266

Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires

Autor: I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, I. P. Soshnikov, S. V. Mikushev, V. G. Dubrovskii, George E. Cirlin

Publikováno v: 2022 International Conference Laser Optics (ICLO).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fadf819546f97c03eb4bf48bbfb85859
https://doi.org/10.1109/iclo54117.2022.9840142

Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters

Autor: I. P. Smirnova, Filipp E. Komissarenko, L. B. Karlina, I. P. Soshnikov, A. S. Vlasov, M. Z. Shvarts, A. V. Ankudinov

Publikováno v: Semiconductors. 53:1705-1708

The possibility of using lateral Ga(In)AsP nanostructures grown by the catalytic method in a quasi-closed volume from phosphorus and indium vapors on the GaAs (100) surface as an antireflection coating for photovoltaic devices is considered for the f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f0ae893e677b79983eae7b8256d57a6
https://doi.org/10.1134/s1063782619160115

III-V nanowires with quantum dots: MBE growth and properties

Autor: V O Gridchin, K. P. Kotlyar, G. E. Cirlin, A. I. Khrebtov, Igor V. Ilkiv, Rodion R. Reznik, L Leandro, Nika Akopian, N. V. Kryzhanovskaya, I. P. Soshnikov, Yu. B. Samsonenko

Publikováno v: Reznik, R R, Kotlyar, K P, Gridchin, V O, Ilkiv, I V, Khrebtov, A I, Samsonenko, Y B, Soshnikov, I P, Kryzhanovskaya, N V, Leandro, L, Akopian, N & Cirlin, G E 2021, ' III-V nanowires with quantum dots: MBE growth and properties ', Journal of Physics: Conference Series, vol. 2015, no. 1, 012124 . https://doi.org/10.1088/1742-6596/2015/1/012124

We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the resul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e9724d7a6792f91054fe76c2c03d798
https://orbit.dtu.dk/en/publications/40b99544-ecbf-41fa-b6f9-c8da135cb126