Zobrazeno 1 - 10
of 66
pro vyhledávání: '"I Périchaud"'
Autor:
H. Ouaddah, G. Regula, G. Reinhart, I. Périchaud, F. Guittonneau, L. Barrallier, J. Baruchel, T.N. Tran Caliste, N. Mangelinck-Noël
Publikováno v:
Acta Materialia
Acta Materialia, 2023, 252, pp.118904. ⟨10.1016/j.actamat.2023.118904⟩
Acta Materialia, 2023, 252, pp.118904. ⟨10.1016/j.actamat.2023.118904⟩
International audience; For all fabrication processes of the photovoltaic (PV) industry based on silicon, grain boundaries, dislocations, and impurity contamination control during solidification remains a major challenge to improve the electrical pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93e15b9a5ec82fbc8263c6c8e095624e
https://hal.science/hal-04070850/document
https://hal.science/hal-04070850/document
Akademický článek
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Publikováno v:
Progress in Photovoltaics: Research and Applications. 17:297-305
n-Type silicon wafers present some definite advantages for the photovoltaic industry, mainly due to the low capture cross sections of minority carriers for most metallic impurities. This peculiarity is beneficial for multicrystalline silicon (mc-Si)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a12c2af6de88abd55bc49e033335d9
https://doi.org/10.1002/pip.883
https://doi.org/10.1002/pip.883
Autor:
I. Périchaud
Publikováno v:
Solar Energy Materials and Solar Cells. 72:315-326
Electrical properties of crystalline silicon wafers used for photovoltaics are degraded by metallic impurity atoms. Such atoms are introduced during the crystal growth or during the processing steps needed to prepare solar cells. External gettering t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f71678b3687e83381c3adff75a028a0a
https://doi.org/10.1016/s0927-0248(01)00179-9
https://doi.org/10.1016/s0927-0248(01)00179-9
Publikováno v:
Materials Science and Engineering: B. 71:229-232
Multicrystalline silicon wafers are submitted to He ion implantations at various energy levels and fluences in the ranges 40–120 keV and 10 16 –10 17 cm −2 , respectively. Cavities are formed after annealing at 900°C for 1 h to 4 h in argon fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::359298c459505c292571d050e037b753
https://doi.org/10.1016/s0921-5107(99)00380-3
https://doi.org/10.1016/s0921-5107(99)00380-3
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
I. Périchaud, J.J. Simon
Publikováno v:
Materials Science and Engineering: B. 36:183-186
Oxygen-rich Czochralski and float zone single silicon crystals have been investigated after scratching and plastic deformation in order to generate a dislocation network, under the same experimental conditions. The electrical effects of dislocations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7022588ead6e71d4c8f8ae7852839e02
https://doi.org/10.1016/0921-5107(95)01299-0
https://doi.org/10.1016/0921-5107(95)01299-0
Publikováno v:
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2008, 92 (10), pp.1269-1273
Solar Energy Materials and Solar Cells, Elsevier, 2008, 92 (10), pp.1269-1273
A solution to the problem of the shortage of silicon feedstock used to grow multicrystalline ingots can be the production of a feedstock obtained by the direct purification of upgraded metallurgical silicon by means of a plasma torch. It is found tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b11caac8109a6fee335eae27d0c4e71
https://hal.archives-ouvertes.fr/hal-00381811
https://hal.archives-ouvertes.fr/hal-00381811
Autor:
E. Yakimov, I. Périchaud
Publikováno v:
Applied Physics Letters. 67:2054-2056
Gold diffusion was used to understand the influence of phosphorus diffusion on defect structure of two step annealed Czochralski silicon wafers which contain oxygen related precipitates. Thanks to deep level transient spectroscopy measurements and us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4559fc0cc20637232461f5628849ffc
https://doi.org/10.1063/1.115076
https://doi.org/10.1063/1.115076