Zobrazeno 1 - 10
of 30
pro vyhledávání: '"I N Kots"'
Publikováno v:
Russian Microelectronics. 51:236-242
Publikováno v:
Russian Microelectronics. 51:126-133
Abstract This paper presents the results of experimental studies of the modes of formation of nanosized structures on the surface of a silicon substrate by the method of focused ion beams (FIB). The regularities of the effect of the ion beam current,
Publikováno v:
Ferroelectrics. 575:140-143
The electrophysical characteristics of the PZT film formed on a silicon by the method of high-frequency reactive plasma sputtering were studied, and their relationship with the structure of the fil...
Publikováno v:
Russian Microelectronics. 48:72-79
The regimes of submicron and nanosized profiling of the KDB-10 Si(100) wafer surface by the focused ion beam (FIB) technique are experimentally investigated. It is established that with an increase in the ion beam current from 1 to 300 pA, the diamet
Publikováno v:
Russian Microelectronics. 48:66-71
The nanoscaled profiling of a silicon 5 (111) n-type substrate surface is studied by the local anodic oxidation (LAO). Varying the voltage pulse amplitude from 5 to 12.5 V and the humidity from 30 ± 1 to 70 ± 1% during the LAO is a promising way to
Autor:
V V Polyakova, O A Ageev, K Korzun, R. V. Tominov, Z E Vakulov, V. S. Klimin, I N Kots, A. A. Rezvan
Publikováno v:
Journal of Physics: Conference Series. 1410(1)
This paper shows the results of study of the effect of SiO2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO
Publikováno v:
Journal of Physics: Conference Series. 1695:012028
The use of focused ion beams and atomic plasma chemical etching for forming an array of field emission structures on surface of SiC substrates is considered. SF6 was used as the fluorine-containing gas. Topology of formed elements was monitored using
Autor:
O A Ageev, A. A. Rezvan, T. S. Abramovich, Z E Vakulov, I. N. Kots, T. A. Zubova, V. S. Klimin, R. V. Tominov
Publikováno v:
Journal of Physics: Conference Series. 1695:012199
The work considers the application of focused ion beam techniques for the formation of nanoscale structures, as well as the atomic layer etching method for removing layers with surface defects. Also in the work, modeling of the formation of structure
Publikováno v:
Journal of Physics: Conference Series. 1695:012013
In this work, the effect of the dose of implantation of Ga atoms into the silicon surface on the epitaxial growth of GaAs was investigated. We demonstrate that the deposition of GaAs occurs mainly on modified areas. Separate crystallites of GaAs with
Publikováno v:
Journal of Physics: Conference Series. 1410:012047
The results of studies of the effect of technological modes of nanoscale silicon substrate surface profiling by local anodic oxidation (LAO). The effect of relative humidity and the amplitude of the voltage applied to the tip-substrate system with LA