Zobrazeno 1 - 3
of 3
pro vyhledávání: '"I Lucian Prejbeanu"'
Autor:
I. Lucian Prejbeanu, Bernard Dieny
Publikováno v:
"Introduction to Magnetic Random&;#x02010;Access Memory"
Introduction to Magnetic Random&;#x02010;Access Memory
Introduction to Magnetic Random-Access Memory
Introduction to Magnetic Random&;#x02010;Access Memory
Introduction to Magnetic Random-Access Memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da228cf11df2c946bc7edc3ba03fe37d
Autor:
Bernard Dieny, C. Portemont, I Lucian Prejbeanu, Clarisse Ducruet, Bernard Rodmacq, Lavinia Elena Nistor
Publikováno v:
IEEE Transactions on Magnetics. 46:1412-1415
The perpendicular magnetic anisotropy (PMA) of Pt/CoFe(B)/MgO bottom electrodes and the tunnel magnetoresistance (TMR) of CoFeB-based magnetic tunnel junctions (MTJ) have been analyzed as a function of Mg thickness for naturally oxidized barriers. Lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f092c747bc8fc2e78d0602f45576c71b
https://doi.org/10.1109/tmag.2010.2045641
https://doi.org/10.1109/tmag.2010.2045641
Autor:
Ricardo Sousa, I. Lucian Prejbeanu
Publikováno v:
Comptes Rendus Physique. 6:1013-1021
Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c7611d02f07beb897ae128bca0492d
https://doi.org/10.1016/j.crhy.2005.10.007
https://doi.org/10.1016/j.crhy.2005.10.007