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pro vyhledávání: '"I Lucian Prejbeanu"'
Autor:
I. Lucian Prejbeanu, Bernard Dieny
Publikováno v:
"Introduction to Magnetic Random&;#x02010;Access Memory"
Introduction to Magnetic Random&;#x02010;Access Memory
Introduction to Magnetic Random-Access Memory
Introduction to Magnetic Random&;#x02010;Access Memory
Introduction to Magnetic Random-Access Memory
Autor:
Bernard Dieny, C. Portemont, I Lucian Prejbeanu, Clarisse Ducruet, Bernard Rodmacq, Lavinia Elena Nistor
Publikováno v:
IEEE Transactions on Magnetics. 46:1412-1415
The perpendicular magnetic anisotropy (PMA) of Pt/CoFe(B)/MgO bottom electrodes and the tunnel magnetoresistance (TMR) of CoFeB-based magnetic tunnel junctions (MTJ) have been analyzed as a function of Mg thickness for naturally oxidized barriers. Lo
Autor:
Ricardo Sousa, I. Lucian Prejbeanu
Publikováno v:
Comptes Rendus Physique. 6:1013-1021
Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is des
Autor:
Bandiera, S., Sousa, R. C., Ducruet, C., Portemont, C., Auffret, S., Prejbeanu, I. L., Dieny, B.
Publikováno v:
Journal of Applied Physics; May2010, Vol. 107 Issue 9, p09C715-1-09C715-3, 3p
Publikováno v:
Applied Physics Letters; 6/8/2015, Vol. 106 Issue 23, p1-4, 4p, 1 Diagram, 4 Graphs
Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fas