Zobrazeno 1 - 10
of 49
pro vyhledávání: '"I L, Kalentyeva"'
Autor:
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, M. N. Drozdov, D. A. Zdoroveyshchev, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Kudrin, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky
Publikováno v:
Physics of the Solid State. 63:1593-1600
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6d5e2def68b40600fa25aff91842b98
https://doi.org/10.1134/s106378342109047x
https://doi.org/10.1134/s106378342109047x
Autor:
V. P. Lesnikov, M. V. Ved’, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, I. L. Kalentyeva, A. V. Kudrin, R. N. Kryukov
Publikováno v:
Physics of the Solid State. 63:1028-1035
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5d55108c3663b7692a65a83f29378a7
https://doi.org/10.1134/s1063783421070131
https://doi.org/10.1134/s1063783421070131
Autor:
B. N. Zvonkov, Aleksey Nezhdanov, O. V. Vikhrova, A. E. Parafin, D. V. Khomitskii, Yu. M. Kuznetsov, Ivan Antonov, I. L. Kalentyeva, Yu. A. Danilov
Publikováno v:
Physics of the Solid State. 63:425-434
The possibility of modifying the properties of a (Ga,Mn)As layer on the surface of a quantum-size InGaAs/GaAs-structure by laser annealing with the conservation of its emitting properties is studied. To perform these studies by a combination of the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084aed32bef9a4cbcc4c89bff46eb117
https://doi.org/10.1134/s1063783421030185
https://doi.org/10.1134/s1063783421030185
Autor:
M. V. Dorokhin, A. V. Zdoroveyshchev, M. P. Temiryazeva, A. G. Temiryazev, S. A. Nikitov, Yu. A. Dudin, O. V. Vikhrova, I. L. Kalentyeva, Alexandr V. Sadovnikov, A. V. Kudrin, Yu. A. Danilov
Publikováno v:
Physics of the Solid State. 63:386-394
The possibility of using implantation of 20-keV He+ ions for modification of the domain structure and magnetic properties of CoPt films (formed by the electron-beam evaporation method) with different cobalt contents (Co0.45Pt0.55 and Co0.35Pt0.65) ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13fc3429fd2291baa0461968a97d8734
https://doi.org/10.1134/s1063783421030082
https://doi.org/10.1134/s1063783421030082
Autor:
Yu. A. Danilov, I. L. Kalentyeva, D. V. Khomitsky, A. E. Parafin, B. N. Zvonkov, O. V. Vikhrova, Aleksey Nezhdanov, Ivan Antonov
Publikováno v:
Semiconductors. 54:1598-1604
The effects of KrF excimer laser pulses on the crystalline and optical properties of structures with four InxGa1 – xAs/GaAs quantum wells (x ranging from 0.08 to 0.25) are studied. The results obtained by Raman spectroscopy and reflection spectrosc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5d01e5674d75e899f034cac84b38931
https://doi.org/10.1134/s1063782620120428
https://doi.org/10.1134/s1063782620120428
Autor:
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, E. A. Larionova, B. N. Zvonkov, O. A. Soltanovich, A. V. Kudrin, V. A. Koval’skii, M. V. Dorokhin, A. V. Zdoroveyshchev
Publikováno v:
Physics of the Solid State. 62:423-430
Diode p-(GaMn)As/n-InGaAs/n+-GaAs heterostructures with different thicknesses (from 5 to 50 nm) of the (Ga,Mn)As dilute magnetic semiconductor layer have been fabricated and studied. The negative magnetoresistance effect reaching 6–8% is observed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1fa9b6308af81e5a43ce708094b1d0
https://doi.org/10.1134/s1063783420030270
https://doi.org/10.1134/s1063783420030270
Autor:
M V, Dorokhin, O V, Vikhrova, P B, Demina, I L, Kalentyeva, P S, Vergeles, E B, Yakimov, V P, Lesnikov, B N, Zvonkov, M V, Ved, Yu A, Danilov, A V, Zdoroveyshchev
Publikováno v:
Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine. 179
The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::03b54e118dcc2d2163d234d2ddf61c40
https://pubmed.ncbi.nlm.nih.gov/34814010
https://pubmed.ncbi.nlm.nih.gov/34814010
Autor:
A. G. Temiryazev, I. L. Kalentyeva, S. A. Nikitov, O. V. Vikhrova, Yu. A. Dudin, A. V. Zdoroveyshchev, Yu. A. Danilov, M. V. Dorokhin, Alexandr V. Sadovnikov, A. V. Kudrin, M. P. Temiryazeva
Publikováno v:
Physics of the Solid State. 61:1646-1651
The effect of ion irradiation on magnetic properties of films of the ferromagnetic CoPt alloy fabricated by electron-beam evaporation has been studied. It is found that the coercive force decreases and the lateral component of the easy-magnetization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06a0984298918f8b3ca332b2f9e2cfcf
https://doi.org/10.1134/s1063783419090105
https://doi.org/10.1134/s1063783419090105
Autor:
V. A. Kovalskiy, M. V. Dorokhin, O. V. Vikhrova, E. A. Larionova, O. A. Soltanovich, B. N. Zvonkov, Yu. A. Danilov, I. L. Kalentyeva, A. V. Kudrin
Publikováno v:
Semiconductors. 53:332-338
A new design for diode heterostructures with (Ga, Mn)As ferromagnetic layers is experimentally investigated. The diode structures are fabricated using a combination of metal-organic chemical vapor deposition (MOCVD) epitaxy and pulsed laser depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6303ee51a2c5db1b5b09b37b15d2e3ec
https://doi.org/10.1134/s1063782619030230
https://doi.org/10.1134/s1063782619030230
Autor:
A. V. Zdoroveyshchev, Yu. A. Danilov, P. S. Vergeles, P. B. Demina, V. P. Lesnikov, M. V. Ved, O. V. Vikhrova, Eugene B. Yakimov, B. N. Zvonkov, M. V. Dorokhin, I. L. Kalentyeva
Publikováno v:
Applied Radiation and Isotopes. 179:110030
The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0cab3c8db0822cde3a0159546e6aad8
https://doi.org/10.1016/j.apradiso.2021.110030
https://doi.org/10.1016/j.apradiso.2021.110030