Zobrazeno 1 - 10
of 67
pro vyhledávání: '"I H Tan"'
Autor:
M. de Jong-Fintelman, H. R. Heilema, Hajo I. J. Wildschut, D. Berks, W. J. Hofdijk, G. de Winter, M. I. H. Tan, P. C. M. de Groot
Publikováno v:
Integrale geboortezorg ISBN: 9789036822015
In de huidige tijd is de inzet van digitale middelen bij integrale geboortezorg niet meer weg te denken. Er worden steeds meer toepassingen ontwikkeld, zoals eHealth, het perinataal webbased dossier, patient- of zwangerenportalen, keuzehulpen, e-lear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd1e60f5f22aaf8148f7a6786c18520
https://doi.org/10.1007/978-90-368-2202-2_9
https://doi.org/10.1007/978-90-368-2202-2_9
Autor:
E. I. Chen, G. E. Hofler, Fred A. Kish, D. A. Vanderwater, T. D. Ostentowski, J.-W. Huang, I. H. Tan
Publikováno v:
Journal of Electronic Materials. 29:188-194
The AlGaInP/GaP wafer-bonded transparent-substrate (TS) light-emitting diodes (LEDs) have been shown to exhibit luminous efficiencies exceeding many conventional lightning sources including 60 W incandescent sources. This paper will demonstrate the f
Autor:
I. H. Tan, Alcides Lopes Leão
Publikováno v:
Biomass and Bioenergy. 14:83-89
Energy generation is needed in Sao Paulo and MSW represents a promising alternative, although it is more expensive than hydroelectric power. About 14 900 t/day of MSW is generated, of which 8433 t/day is domestic and commercial MSW. From this amount,
Publikováno v:
Proceedings of the IEEE. 85:1752-1764
First commercially introduced in 1990, AlGaInP light emitting diodes (LEDs) currently are the highest (luminous) efficiency visible solid-state emitters produced to date in the red through yellow spectral regime. The attainment of this high-efficienc
Autor:
Russell D. Dupuis, E.L. Hu, J.E. Bowers, M.R. Islam, B. G. Streetman, I.-H. Tan, Joe C. Campbell, S.S. Murtaza, K.A. Anselm, R.V. Chelakara
Publikováno v:
Journal of Lightwave Technology. 14:1081-1089
High speeds, high external quantum efficiencies, narrow spectral linewidths, and convenience in coupling make resonant-cavity photodetectors (RECAP's) good candidates for telecommunication applications. In this paper, we present analytical expression
Publikováno v:
Physics of Plasmas. 2:1521-1528
Magnetic and electrostatic fluctuations have been measured at the short scale length of the collisionless skin depth (c/ωpe) using small magnetic and electrostatic probes in the Tokapole II tokamak [Nucl. Fusion 9, 1509 (1979)]. For certain conditio
Autor:
Mark S. Sherwin, Dieter Bimberg, S. J. Allen, John Cerne, M. Sundaram, P.C. van Son, I.-H. Tan
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 341:174-177
At the UCSB free-electron laser we have realized a set-up to detect the photoluminescence from semiconductor quantum structures while they are irradiated with intense far-infrared radiation. The effect of the radiation on both quantum wells and quant
Autor:
Stewart C. Prager, I. H. Tan
Publikováno v:
Physical Review Letters. 68:1714-1717
Electrostatic turbulence and transport has been measured in the tokamak edge as the safety factor (and, concomitantly, the energy-confinement time) and the edge equilibrium gradients are varied substantially. The turbulence is largely independent of
Publikováno v:
AIP Conference Proceedings.
Three plasma processing systems based on PII technique have been used in the improvement of surface properties of different materials important for aerospace and space applications. Metal plasma PII of Al and Mg was used for surface protection of pol
Autor:
C. P. Kocot, D. Collins, F. A. Kish, P.N. Grillot, T. S. Tan, E. I. Chen, I.-H. Tan, Gloria E Hofler, M. Ochiai-Holcomb, Nathan F. Gardner, M. G. Craford, Michael R. Krames, S. A. Stockman, M. Hueschen, G. Sasser, Carrie Carter-Coman, B. Loh, Herman C Chui, J. Posselt, J.-W. Huang
Publikováno v:
Applied Physics Letters. 75:2365-2367
A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area (∼0.25 mm2). The TIP geometry decreases the mean photon path-lengt