Zobrazeno 1 - 10
of 16
pro vyhledávání: '"I G Orletskyi"'
Autor:
I. G. Orletskyi, M. I. Ilashchuk, I. P. Koziarskyi, M. M. Solovan, D. P. Koziarskyi, E. V. Maistruk, O. A. Parfenyuk
Publikováno v:
Springer Proceedings in Physics ISBN: 9783031180958
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69e8f58d019e83c8fe0f8fb54af18ef7
https://doi.org/10.1007/978-3-031-18096-5_32
https://doi.org/10.1007/978-3-031-18096-5_32
Publikováno v:
2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP).
The conditions for the production of isotype FTO/n-CdTe heterojunctions by spray pyrolysis of SnO 2 :F (FTO) thin films on n-CdTe crystalline substrates have been studied. The mechanisms of electron motion through the energy barrier of the heterojunc
Autor:
I G Orletskyi, M I Ilashchuk, M M Solovan, E V Maistruk, I P Koziarskyi, D P Koziarskyi, A I Mostovyi, K S Ulyanytskiy
Publikováno v:
Semiconductor Science and Technology. 37:065027
Photosensitive Schottky diodes of graphite/n-Cd1−x Zn x Te were obtained by depositing thin films of graphitized carbon on crystalline substrates of n-Cd1−x Zn x Te solid solution by electron beam evaporation. Based on the analysis of the single-
Autor:
D. P. Koziarskyi, I. P. Koziarskyi, Eduard V. Maistruk, I G Orletskyi, Pavlo D. Maryanchuk, M. M. Solovan
Publikováno v:
Fourteenth International Conference on Correlation Optics.
Autor:
S. V. Nichyi, O. A. Parfenyuk, M. N. Solovan, I G Orletskyi, Pavlo D. Maryanchuk, Eduard V. Maistruk, M. I. Ilashchuk
Publikováno v:
Semiconductors. 52:1171-1177
The conditions for fabricating n-FeS2/p-Cd1 –xZnxTe heterojunctions by the spray pyrolysis of thin pyrite films on p-Cd1 –xZnxTe crystalline substrates are investigated. A comprehensive analysis of the current–voltage (I–V) and capacitance–
Autor:
Eduard V. Maistruk, H. P. Parkhomenko, M. I. Ilashchuk, S. V. Nichyi, I G Orletskyi, I. P. Koziarskyi, D. P. Koziarskyi, P. D. Marianchuk
Publikováno v:
Optik. 241:167246
The study of electric and photoelectric properties of anisotypic ZnO:Al/n-CdS/p-Cd1−xZnxTe heterojunctions made on unannealed and annealed substrates at high temperature (T = 1200 K) under conditions of minimum cadmium vapor pressure. Sequential ap
Autor:
Taras T. Kovaliuk, A. I. Mostovyi, I G Orletskyi, Pavlo D. Maryanchuk, Viktor V. Brus, S. L. Abashin, Mykhailo M. Solovan
Publikováno v:
Semiconductors. 51:542-548
Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100
Autor:
Pavlo D. Maryanchuk, Eduard V. Maistruk, Giancarlo Cicero, I G Orletskyi, Viktor V. Brus, Elena Maria Tresso, T.I. Boichuk, Federico Pinna, Mykhailo M. Solovan, M. I. Ilashchuk
Publikováno v:
Journal of Physics and Chemistry of Solids. 100:154-160
This paper reports a complex analysis of structural, optical and electrical properties of Cu2ZnSnS4 (CZTS) films, prepared by spin-coating of a sol-gel based on the low-cost and environmentally friendly solvent dimethyl sulfoxide (DMSO) and synthesiz
Autor:
I.S. Babichuk, Junle Qu, Viktor V. Brus, I G Orletskyi, I.V. Babichuk, Oleksandr I. Datsenko, Oleksandr Hreshchuk, Iuliia Golovynska, Guiwen Xu, Volodymyr O. Yukhymchuk, J. Li, Sergii Golovynskyi, Pavlo D. Maryanchuk
Publikováno v:
Materials Letters. 216:173-175
Cu2ZnSnS4 (CZTS) thin films prepared by the spray pyrolysis method were studied. This deposition method does not require sophisticated technological setup and allows to easily varying different technological parameters, which is perspective in terms
Autor:
I G Orletskyi, Viktor V. Brus, G O Andrushchak, I.S. Babichuk, G P Parkhomenko, M. M. Solovan, A. I. Mostovyi, M. I. Ilashchuk, Nora Schopp, Pavlo D. Maryanchuk
Publikováno v:
Nanotechnology. 32:109601