Zobrazeno 1 - 10
of 19
pro vyhledávání: '"I G Gale"'
Publikováno v:
Journal of Applied Physics. 82:1711-1715
Current transport and instability mechanisms in thin film diodes with nonstoichiometric silicon nitride (a-SiNx:H) semiconducting layers have been investigated. In common with amorphous silicon thin film transistors the electrical characteristics of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4781af0d53c4e460a4baecc1b45014ab
https://doi.org/10.1063/1.365971
https://doi.org/10.1063/1.365971
Autor:
F. Grainger, I. K. Varga, G. Shen, P. Capper, P. J. Orders, M. A. Folkard, I. G. Gale, V. Kumar, K. Fueloop, D. Carr, R. H. Hartley, S. Barton, B. A. Johnson, D. Dutton, T. A. Steele
Publikováno v:
Journal of Electronic Materials. 25:1521-1526
We have found phase modulated ellipsometry (PME) to be a sensitive analytical technique capable of providing real time information on composition, epilayer thickness, growth rate, interdiffusion and surface roughness. To fully exploit the benefits of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c73ff14750b83a9f50edfd368287db3
https://doi.org/10.1007/bf02655393
https://doi.org/10.1007/bf02655393
Publikováno v:
Journal of Crystal Growth. 161:104-118
This review describes several of the main techniques used to determine matrix element distributions and those which can provide a survey of impurity levels and assess deliberate doping concentrations in Cd x Hg 1 − x Te and CdTe-based substrate mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83edd549a48a97a4a4d672d7ed20514b
https://doi.org/10.1016/0022-0248(95)00619-2
https://doi.org/10.1016/0022-0248(95)00619-2
Publikováno v:
Advanced Materials for Optics and Electronics. 5:79-86
The width of the band gap in the ternary system CdxHgI-xTe (CMT) is a function of the value of x and the assessment of device structures requires reliable techniques for the measurement of x both laterally and with depth. This work describes the deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40c6c06bdf96189dc205d1774afc2e8e
https://doi.org/10.1002/amo.860050204
https://doi.org/10.1002/amo.860050204
Publikováno v:
Advanced Materials for Optics and Electronics. 5:101-108
One of the remaining problems in the use of CdZnTe material as substrates in liquid phase epitaxy (LPE) of CdxHg1-xTe (CMT) layers is that of variation in lattice matching, i.e. Zn content, across substrates. This wil become increasingly important in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a8f8a495d6188f9f7186ce6e1019346
https://doi.org/10.1002/amo.860050206
https://doi.org/10.1002/amo.860050206
Publikováno v:
Journal of Crystal Growth. 138:917-923
Electron beam induced current (EBIC) measurements have been applied to shallow-angle bevelled sections through Cd x Hg 1-x Te (CMT) epitaxial layers containing p-n junctions. Samples studied include (a) fully doped homo- and heterostructures grown by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd23d361bcc0982b5af8884a6aa2495
https://doi.org/10.1016/0022-0248(94)90932-6
https://doi.org/10.1016/0022-0248(94)90932-6
Publikováno v:
Semiconductor Science and Technology. 8:S281-S285
Doped homo- and heterostructures of CdxHg1-xTe (CMT) are required for some types of new-generation devices. These structures have been grown by metal organic vapour phase epitaxy (MOVPE) at approximately 360 degrees C onto both CdTe and GaAs (buffere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2901bf609fc5fe4d5d68479a740a9a34
https://doi.org/10.1088/0268-1242/8/1s/061
https://doi.org/10.1088/0268-1242/8/1s/061
Publikováno v:
Semiconductor Science and Technology. 8:S183-S196
In two recent review papers on metal organic vapour phase epitaxy (MOVPE) of cadmium mercury telluride (CMT) particular emphasis was placed on the crucial importance of doping studies to the realization of future device structures Irvine et al. (1991
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da847ad4c843ae8bc65c66764a5747e
https://doi.org/10.1088/0268-1242/8/1s/042
https://doi.org/10.1088/0268-1242/8/1s/042
Autor:
I. G. Gale, J. B. Clegg
Publikováno v:
Surface and Interface Analysis. 17:190-196
SIMS profiles of abrupt dopant distributions in semiconductor materials contain distortions introduced by the measurement process. In quantitative depth profile studies, it is important to determine and remove these errors. We have used the idea that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b1746f7716180d1023c8f6c5fa9081
https://doi.org/10.1002/sia.740170405
https://doi.org/10.1002/sia.740170405
Publikováno v:
Applied Physics Letters. 74:3374-3376
We investigate the relationship between the stability of amorphous silicon thin-film transistors (a-Si:H TFTs) and the bulk properties of a-Si:H films. Threshold voltage shifts in a-Si:H TFTs are characterized by the thermalization energy Eth for dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6875007a661709f4bbccfdeaeb2d49ca
https://doi.org/10.1063/1.123349
https://doi.org/10.1063/1.123349