Zobrazeno 1 - 10
of 61
pro vyhledávání: '"I A Sysoev"'
Publikováno v:
RUDN Journal of Engineering Research, Vol 0, Iss 3, Pp 98-103 (2012)
The possibility of roughness reducing of the Ge/Si (100) film using low-temperature layer of Ge (LT-Ge) has been investigated. It was shown that the substrate temperature change character during the growth process influences on the surface morphology
Externí odkaz:
https://doaj.org/article/3cf0278cb42143d99805df46ea441f99
Autor:
A. A. Artemiev, P. A. Ivanov, A. M. Kashoob, M. A. Grigoriev, R. A. Gandzhaliev, Yu. S. Soloviev, I. A. Sysoev
Publikováno v:
Неотложная медицинская помощь, Vol 10, Iss 2, Pp 309-317 (2021)
Background. Severe fractures of the shin bones are often accompanied by the formation of defects in the tibia, suppuration and soft tissue necrosis. In the case of surgical treatment of fractures, infectious complications reach 3.6-9.1%. One of the m
Externí odkaz:
https://doaj.org/article/78b8969d1b4d44b39f5efe5b542c4c00
Publikováno v:
AIMS Biophysics, Vol 7, Iss 2, Pp 65-75 (2020)
Here we consider the possibility to characterize the signal complexity of electroencephalo-grams using calculation of largest Lyapunov exponent explicitly from time series. This would help in detection of seizures, understanding and modeling epilepti
Externí odkaz:
https://doaj.org/article/e5e7c428abd046138de46595263fd73b
Publikováno v:
Journal of Evolutionary Biochemistry and Physiology. 59:293-301
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3adcaf4ac55dd6f1781605beaa5597f
https://doi.org/10.1134/s0022093023010246
https://doi.org/10.1134/s0022093023010246
Publikováno v:
PLoS ONE, Vol 15, Iss 9, p e0239125 (2020)
A mesoscale network model is proposed for the development of spike and wave discharges (SWDs) in the cortico-thalamo-cortical (C-T-C) circuit. It is based on experimental findings in two genetic models of childhood absence epilepsy-rats of WAG/Rij an
Externí odkaz:
https://doaj.org/article/9918861d03ad4cbeb8ccc2baf54f97d7
Publikováno v:
Crystallography Reports. 64:649-655
The possibility of growing arrays of InxGa1 – xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::755b49abff65557d8182c9aeec48cb8b
https://doi.org/10.1134/s1063774519040126
https://doi.org/10.1134/s1063774519040126
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:493-498
GexSi1 – x/Si nanoheterostructures are synthesized via ion-beam deposition. The crystal structure, surface morphology, and chemical composition are investigated using X-ray diffraction, Raman spectroscopy, scanning probe microscopy, and Auger elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e147caeb7486f1cd820bc722ecf8941
https://doi.org/10.1134/s1027451019030236
https://doi.org/10.1134/s1027451019030236
Autor:
I. A. Sysoev
Publikováno v:
Lecture Notes in Mechanical Engineering ISBN: 9783030548162
The technology of aluminum electrolysis is permanently improved in the direction of increasing the unit power of electrolyzers. The leading aluminum companies over the world try to exploit powerful electrolyzers with roasted anodes operating at curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2941737cb7af3bfb2730fe9bb5472aa6
https://doi.org/10.1007/978-3-030-54817-9_148
https://doi.org/10.1007/978-3-030-54817-9_148
Publikováno v:
THE 2ND INTERNATIONAL CONFERENCE ON PHYSICAL INSTRUMENTATION AND ADVANCED MATERIALS 2019.
The results of an experimental study of the surface morphology and structural properties of thin films of gallium nitride on sapphire obtained by pulsed laser deposition are presented. Pulse laser sputtering of gallium nitride films was carried out b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6998a3391a5d1dde2cc2b763d31e253
https://doi.org/10.1063/5.0032227
https://doi.org/10.1063/5.0032227
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:898-901
The effect of an argon ion beam on the surface of sapphire is studied at different technological parameters: the ion energy, and the angle α between the sapphire surface and the ion-beam axis. The roughness of the sapphire surface is analyzed before
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1235be15f05b04cfc605bf89dea76c27
https://doi.org/10.1134/s1027451018050105
https://doi.org/10.1134/s1027451018050105