Zobrazeno 1 - 1
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pro vyhledávání: '"I A Ajia"'
Autor:
M Ikram Md Taib, M A Ahmad, E A Alias, A I Alhassan, I A Ajia, M M Muhammed, I S Roqan, S P DenBaars, J S Speck, S Nakamura, N Zainal
Publikováno v:
Semiconductor Science and Technology. 38:035025
In this work, indium (In) was introduced as a surfactant during growth of high temperature GaN quantum barriers (QBs) and GaN interlayer of InGaN/GaN green LEDs. A reference LED grown without In-surfactant was also included for comparison. Results su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38872779ceec793541487ec86784185c
https://doi.org/10.1088/1361-6641/acb2eb
https://doi.org/10.1088/1361-6641/acb2eb
