Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Hyunseok Na"'
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 17, Pp n/a-n/a (2023)
Abstract Recently, sol–gel‐derived ZnO thin films have been explored for high performance photodetectors (PDs). However, the crystallinity of sol–gel‐derived ZnO films is inferior to vacuum‐based grown ZnO film, leading to poor photoreactio
Externí odkaz:
https://doaj.org/article/5dc66b40fb024369a5a8b783184cb310
Publikováno v:
Photonics, Vol 10, Iss 10, p 1103 (2023)
This paper investigates the intriguing impact of surface V-shaped defects on the electrical and optical characteristics of GaN-based LEDs, particularly under reverse bias conditions. These defects introduce unique luminescence phenomena, notably gian
Externí odkaz:
https://doaj.org/article/ab081c39d4d945989612dc0195446fd0
Publikováno v:
Journal of the Korean Physical Society. 75:362-366
InGaN/GaN multi-quantum well (MQW) structures were used as an intrinsic semiconductor in InGaN-based p-i-n ultraviolet photodetectors (PDs). The cut-off wavelengths of the PDs grown on normal sapphire substrates (NSSs) and on patterned sapphire subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d49e749c457e00e409c031efe9153a0
https://doi.org/10.3938/jkps.75.362
https://doi.org/10.3938/jkps.75.362
Publikováno v:
Journal of the Korean Physical Society. 72:1194-1197
We report on high-performance GaN-based laser diodes (LDs) with a lattice-matched AlInGaN electron blocking layer (EBL) instead of a p-AlGaN EBL. In the low injection current region, the intensity of the electroluminescence (EL) of the LDs with a p-A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc3fa0b8c760b4cdfb08e2d93cf675f
https://doi.org/10.3938/jkps.72.1194
https://doi.org/10.3938/jkps.72.1194
Publikováno v:
Journal of the Korean Physical Society. 72:254-259
We investigated defect reduction of epitaxial lateral overgrown (ELO) semipolar (11-22) GaN grown on m-plane sapphire substrate by using stripe and hexagon SiO2 patterns. We obtained the fully-coalescent semipolar ELO-GaN templates successfully regar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1223687f45e6510ea840f3de04d197d
https://doi.org/10.3938/jkps.72.254
https://doi.org/10.3938/jkps.72.254
Autor:
Chu-Young Cho, Jong Hwa Lee, Goh-Myeong Bae, Jinsung Kwak, Soon-Yong Kwon, Kibog Park, Jae-Kyung Choi, Hyunseok Na, Kyung Ho Park
Publikováno v:
Journal of Alloys and Compounds. 713:87-94
We investigate the effects of embedded graphene coating on the optical and microstructural properties of ultrathin InGaN/GaN multiple quantum wells (MQWs). The InGaN/GaN MQWs grown on graphene-buffered GaN templates displayed enhanced internal quantu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4e2c7947e352eaaace6f1c4256c6c0e
https://doi.org/10.1016/j.jallcom.2017.04.120
https://doi.org/10.1016/j.jallcom.2017.04.120
Publikováno v:
Microelectronic Engineering. 168:32-36
We studied the optical and crystal properties of semipolar (11-22) hexagonal epitaxial lateral overgrown (HELO) GaN films with different SiO2 hexagonal pattern widths (6–15 μm). With increasing SiO2 hexagonal pattern width, it was difficult to ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::083215c258179a2086cc8b80448e0125
https://doi.org/10.1016/j.mee.2016.10.017
https://doi.org/10.1016/j.mee.2016.10.017
Autor:
Hyunseok Na
Publikováno v:
Journal of the Korean Society for Heat Treatment. 29:124-131
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f9fc782fbcfa6c055d8d089fcb77b0b
https://doi.org/10.12656/jksht.2016.29.3.124
https://doi.org/10.12656/jksht.2016.29.3.124
Autor:
Soon-Yong Kwon, Hyun Jin Kim, Hyunseok Na, Young-Woon Kim, Hui-Chan Seo, Hee Jin Kim, Yoori Shin, Euijoon Yoon, Yoon-Soo Park
Publikováno v:
Journal of Applied Physics; 2/15/2006, Vol. 99 Issue 4, p044906, 5p, 4 Black and White Photographs, 2 Graphs
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 26:451-456
To study emission properties of white phosphorescent organic light emitting devices (PHOLEDs), we fabricated white PHOLEDs of ITO(150 nm) / NPB(30 nm) / TcTa(10 nm) / mCP(7.5 nm) / light-emitting layer(25 nm) / UGH3(5 nm) / Bphen(50 nm) / LiF(0.5 nm)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb67828fe4624091a7fdee067c8a474
https://doi.org/10.4313/jkem.2013.26.6.451
https://doi.org/10.4313/jkem.2013.26.6.451