Zobrazeno 1 - 10
of 830
pro vyhledávání: '"Hyunsang, Hwang"'
Autor:
Ju-Ah Lee, Jongwon Yoon, Seungkwon Hwang, Hyunsang Hwang, Jung-Dae Kwon, Seung-Ki Lee, Yonghun Kim
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2870 (2023)
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become o
Externí odkaz:
https://doaj.org/article/993796d136934d50a89f0db0f5c4980e
Autor:
Gang Hee Gu, Jihye Kwon, Jongun Moon, Hyeonseok Kwon, Jongwon Lee, Yongju Kim, Eun Seong Kim, Min Hong Seo, Hyunsang Hwang, Hyoung Seop Kim
Publikováno v:
Journal of Materials Research and Technology, Vol 17, Iss , Pp 392-403 (2022)
In this study, the nano-to bulk-scale fracture behaviors of a dual phase (DP) steel were investigated by combining a micro-digital-image-correlation (micro-DIC) technique and the finite element method (FEM). The emergence of surface cracks and nano-t
Externí odkaz:
https://doaj.org/article/df7292d3ed1f4a8a9e48f8bbab23c991
Autor:
Wooseok Choi, Myonghoon Kwak, Donguk Lee, Sangmin Lee, Chuljun Lee, Seyoung Kim, Hyunsang Hwang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 666-669 (2022)
In this study, stochastic resonance (SR) exploits the inherent stochastic characteristics of the OTS threshold voltage to enhance the inference performance of neural networks. First, the threshold switching of the OTS device is characterized, and a s
Externí odkaz:
https://doaj.org/article/36fcf58d59c24655a3b8ce8d766dc141
Publikováno v:
AIP Advances, Vol 13, Iss 2, Pp 025053-025053-7 (2023)
To maximize the multilevel data storage capability for high-density memory applications, precise control of quantized conduction with ultralow transition energy is required. We report the quantized conduction in Ag/Ag2S/vacuum conductive-bridge rando
Externí odkaz:
https://doaj.org/article/7b18c375e4f44dff928c9c6ff360e108
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 864-867 (2021)
To improve the turn-off speed and uniformity of atomic threshold switching (TS) devices, we propose the use of the AgSe electrode and controlled bipolar pulse forming method. Compared with TS devices with Ag and AgTe electrodes, TS device with the Ag
Externí odkaz:
https://doaj.org/article/e1a7df8a1f1b4d2e9cf128a12adca9a4
Publikováno v:
Frontiers in Neuroscience, Vol 16 (2022)
Oscillatory neural network (ONN)-based classification of clustered data relies on frequency synchronization to injected signals representing input data, showing a more efficient structure than a conventional deep neural network. A frequency tunable o
Externí odkaz:
https://doaj.org/article/92f4a97b3fea4f1694673800b5f844ec
Autor:
Changhyuck Sung, Andrea Padovani, Bastien Beltrando, Donguk Lee, Myunghoon Kwak, Seokjae Lim, Luca Larcher, Vincenzo Della Marca, Hyunsang Hwang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 404-408 (2019)
We perform experiments and device simulations to investigate the origin of current-voltage (I-V) linearity of TaOX-based resistive switching memory (RRAM) devices for their possible application as electronic synapses. By using electrical characteriza
Externí odkaz:
https://doaj.org/article/70522ce61fc14eb881ca237a70ba25d5
Publikováno v:
Frontiers in Neuroscience, Vol 15 (2021)
Hardware neural network (HNN) based on analog synapse array excels in accelerating parallel computations. To implement an energy-efficient HNN with high accuracy, high-precision synaptic devices and fully-parallel array operations are essential. Howe
Externí odkaz:
https://doaj.org/article/a9b0edfebd4e4f6fad57ba40fdda8767
Publikováno v:
IEEE Electron Device Letters. 44:368-371
Publikováno v:
Materials Research Letters, Vol 6, Iss 5, Pp 261-267 (2018)
Deformation behavior of a harmonic structured material (HSM), core–shell 304L stainless steel, is investigated using micro-digital image correlation (micro-DIC). High strain-partitioning between core and shell is observed. Because the grain boundar
Externí odkaz:
https://doaj.org/article/fcb98b4cb4c14c8eadb21247a7850f25