Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hyunkwang Jung"'
Publikováno v:
IEEE Transactions on Electron Devices. 58:2796-2799
We propose an extraction technique for parasitic resistance (RP) with L-, VGS-, and VDS-dependences even for large VDS in amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), by employing IDS-VGS characteristics (as a function of
Autor:
Sunil Kim, Sungchul Kim, Yongsik Kim, Joo-Han Kim, Minkyung Bae, Dae Hwan Kim, Jun-Hyun Park, Inseok Hur, Sei Yong Park, Dongsik Kong, Je-Hun Lee, Jae Chul Park, Jaehyeong Kim, Yongwoo Jeon, Chang-Jung Kim, Dong Myong Kim, Jae-Woo Park, Woojoon Kim, Hyunkwang Jung, Byung Du Ahn
Publikováno v:
SID Symposium Digest of Technical Papers. 42:1227-1230
Analytical current and capacitance models for amorphous Indium-Gallium-Zinc-Oxide Thin film transistors (a-IGZO TFTs) are proposed for application to the simulation of a-IGZO TFT-based circuits. The accuracy of the proposed models are verified by com
Autor:
Hyunkwang Jung, Yongwoo Jeon, Dae Hwan Kim, Minkyung Bae, Sungchul Kim, Dong Myong Kim, Yongsik Kim, Dongsik Kong
Publikováno v:
IEEE Electron Device Letters. 32:1388-1390
The effect of the active layer thickness (TIGZO) on the negative bias stress (NBS)-induced threshold voltage shift (ΔVT) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DO
Autor:
Sungchul Kim, Hagyoul Bae, Minkyung Bae, Ja Sun Shin, Hyunkwang Jung, Jieun Lee, Jaeman Jang, Dae Hwan Kim, Dongsik Kong, Dong Myong Kim
Publikováno v:
IEEE Electron Device Letters. 32:761-763
Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD, respectively, from the total resistance RTOT is very important in the design, modeling, and characteriz