Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Hyunjun Sim"'
Publikováno v:
Journal of Korea Game Society. 23:13-25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35224cdf367f7dce316a9e62104292e8
https://doi.org/10.7583/jkgs.2023.23.2.13
https://doi.org/10.7583/jkgs.2023.23.2.13
Publikováno v:
Journal of Korean Society of Hazard Mitigation. 15:267-273
In this study, a design method of a bio-retention pond for reducing suspended solids at an industrial area is proposed. After simulatingsuspended solid loads at a study drainage catchment using SWMM calibrated with the unit load estimation method whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd9c8e1a70036fec84945a006799c810
https://doi.org/10.9798/kosham.2015.15.5.267
https://doi.org/10.9798/kosham.2015.15.5.267
Publikováno v:
Microelectronics Journal. 36:725-728
The electronic-energy band structures and total density of states (TDOS) for bulk BaTiO 3 and SrTiO 3 were calculated by the first-principles calculations using density-functional theory and local-density approximation. The calculated band structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1248d153257bfc15fafcb0d7efaafab6
https://doi.org/10.1016/j.mejo.2005.03.001
https://doi.org/10.1016/j.mejo.2005.03.001
Publikováno v:
Applied Surface Science. 250:146-151
Using first-principles calculations based on density-functional theory in its local-density approximation, we investigate the energy band structures and total density of states (TDOS) of barium strontium titanates (BSTs). Direct band gaps of 1.89 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6a25ffb36614307ea9c4264da823817
https://doi.org/10.1016/j.apsusc.2004.12.043
https://doi.org/10.1016/j.apsusc.2004.12.043
Publikováno v:
Microelectronic Engineering. 80:260-263
We investigated the reproducible and memory resistance switching characteristics of pulsed-laser deposited thin polycrystalline Nb"2O"5 film for application to nonvolatile memory devices. Reproducible switching cycles were observed, and the resistanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0774d44efb189c7a553dae97ebc0e15a
https://doi.org/10.1016/j.mee.2005.04.012
https://doi.org/10.1016/j.mee.2005.04.012
Publikováno v:
Applied Surface Science. 242:121-128
We study the electronic structure and electron energy loss function of different transition-metal (Y, Sc, Zr, Hf and Ta) aluminates using density functional theory (DFT) and local density approximation (LDA). The transition metals are substituted fav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a84b1adb84d8be75c7abdeca3c749e0c
https://doi.org/10.1016/j.apsusc.2004.08.004
https://doi.org/10.1016/j.apsusc.2004.08.004
Publikováno v:
Microelectronics Journal. 35:655-658
The energy band gaps and total density of states of different transitional metal (Sc, Zr) silicates have been studied using density functional theory and local density approximation. The problem of a decreasing band gap in Zr silicate predicts the ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbae66bd3ed4e18fd99835e2b9756cc5
https://doi.org/10.1016/j.mejo.2004.04.006
https://doi.org/10.1016/j.mejo.2004.04.006
Publikováno v:
Thin Solid Films. 518:5676-5678
The reverse resistance switching is observed in polycrystalline Nb 2 O 5 film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::804d1feba3261b5d3a493d71f4207884
https://doi.org/10.1016/j.tsf.2009.10.026
https://doi.org/10.1016/j.tsf.2009.10.026
Publikováno v:
Japanese Journal of Applied Physics. 45:6993-6995
The initial performance and reliability characteristics of metal–oxide–semiconductor (MOS) capacitors with HfO2 films deposited with H2O or D2O as an oxidant and Hf[N(C2H5)(CH3)]4 as a metal precursor using atomic layer deposition (ALD) were inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec8a607c8f394729c9663c6a687b6531
https://doi.org/10.1143/jjap.45.6993
https://doi.org/10.1143/jjap.45.6993
Autor:
Hyejung Choi, Myoung-Jae Lee, Sunae Seo, Hyunjun Sim, Hyunsang Hwang, Inkyung Yoo, Dongsoo Lee, Dooho Choi
Publikováno v:
IEEE Electron Device Letters. 26:719-721
The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrO/sub x//p/sup +/-Si sandwich structure fabricated by reactive sputtering shows t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47bce856491181dbe01b3e5fd9a2d46f
https://doi.org/10.1109/led.2005.854397
https://doi.org/10.1109/led.2005.854397