Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hyunjun Bae"'
Autor:
Min-Sang Kim, Sung Dae Suk, Keun Hwi Cho, Donggun Park, Kyoung Hwan Yeo, Jun Seo, Bokkyoung Park, Won-Seoung Lee, Dong-Won Kim, Suk-Kang Sung, Hyunjun Bae, Ji-Myoung Lee, Yun-Young Yeoh, Ming Li
Publikováno v:
2008 Symposium on VLSI Technology.
Gate-all-around (GAA) MOSFET with single silicon nanowire is fabricated and applied to SONOS memory as a cell transistor for NAND flash string. Driving current over 1 uA, which is sufficient to NAND string, is obtained with single nanowire of ~7 nm w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162768ac866883b4374514f0ded97381
https://doi.org/10.1109/vlsit.2008.4588593
https://doi.org/10.1109/vlsit.2008.4588593
Autor:
Kyoung Hwan Yeo, Keun Hwi Cho, Ming Li, Sung Dae Suk, Yun-young Yeoh, Min-Sang Kim, Hyunjun Bae, Ji-Myoung Lee, Suk-Kang Sung, Jun Seo, Bokkyoung Park, Dong-Won Kim, Donggun Park, Won-Seoung Lee
Publikováno v:
2008 Symposium on VLSI Technology; 2008, p138-139, 2p