Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hyunjo Shin"'
Autor:
Seung-Mok Shin, Taiki Uemura, E. S. Jung, Seungbae Lee, Y. Ji, Hyunjo Shin, Joo-Byoung Yoon, H. J. Goo, Yun-Jae Lee, Kyongtaek Lee, Jun-Kyun Park, S. H. Hwang, Jung Hyoung Lee, Jongkyun Kim, G. T. Jeong, Seung-Uk Han, Y. J. Song, K. C. Park, Sun-Ghil Lee, G. H. Koh, B. Y. Seo, Sangwoo Pae, Junhee Lim
Publikováno v:
IRPS
STT-MRAM has great attention as next generation memory to replace commercialized memory. However, not many articles are available on various MRAM reliability items. In this paper, we studied FBC trend of STT-MRAM with ECC off mode under various relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f393364e289889248b945cecfaaea618
https://doi.org/10.1109/irps.2019.8720429
https://doi.org/10.1109/irps.2019.8720429
Autor:
Minhyeok Choe, Sangmin Park, Wooyeon Kim, Jongwoo Park, Hyunjo Shin, Jeong-Hoon Kim, Yunwhan Kim, Jiheon Jeong, Hyewon Shim, Sangwoo Pae, Sang-chul Shin, Haebum Lee
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
In a succession of the set level stress test for high speed mobile application processor (AP) reliability [1], At-Speed HTOL (ASH) incorporated by user conditions was employed to realistically project the field failure rate of product. Using the wors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2f742af3d7ac9d36c392b528eb78c86
https://doi.org/10.1109/irps.2016.7574583
https://doi.org/10.1109/irps.2016.7574583
Autor:
Yunhwan Kim, Jiheon Jeong, Sang-chul Shin, Joungsu Ryu, Hyunjo Shin, Kyongtaek Lee, Donghee Lee, Jeongsik Lim, Jongwoo Park, Taeyong Lee, Sangwoo Pae, Wooyeon Kim
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Similar to At Speed HTOL (ASH) [1], the study of Vmin-shift induced failure on Application Processor (AP) is stretched to the “set level” stress test. The set level test enables to filter out unscreened functional or power related early fails par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fe6645f4181e012c0f4ccbdba4cdac1
https://doi.org/10.1109/irps.2014.6861170
https://doi.org/10.1109/irps.2014.6861170
Autor:
Park, Jongwoo, Wooyeon Kim, Taeyong Lee, Donghee Lee, Jeongsik Lim, Jiheon Jeong, Yunhwan Kim, Lee, Kyongtaek, Joungsu Ryu, Sang-Chul Shin, Hyunjo Shin, Sangwoo Pae
Publikováno v:
2014 IEEE International Reliability Physics Symposium; 2014, pPR.3.1-PR.3.3, 0p