Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Hyunjae Jang"'
Autor:
In Huh, Mun-Bo Shim, Kyuhun Lee, Byungseon Choi, Jae Myung Choe, Wonik Jang, Hyunjae Jang, Changwook Jeong, Dae Sin Kim, Sanghoon Myung, Jisu Ryu, Moon-Hyun Cha, Jinwoo Kim, Daeyoung Park, Ho-Joon Lee
Publikováno v:
IEEE Transactions on Electron Devices. 68:5364-5371
There is a growing consensus that the physics-based model needs to be coupled with machine learning (ML) model relying on data or vice versa in order to fully exploit their combined strengths to address scientific or engineering problems that cannot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34df8baa6086f7df68bfb634a37e8323
https://doi.org/10.1109/ted.2021.3093844
https://doi.org/10.1109/ted.2021.3093844
Publikováno v:
Journal of Alloys and Compounds. 918:165649
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ad0a2436294c7ceec59bb84d0c2377b
https://doi.org/10.1016/j.jallcom.2022.165649
https://doi.org/10.1016/j.jallcom.2022.165649
Autor:
Hyunjae Jung, Hyung-Ryul Park, Hyeong Wook Kim, Hyunjae Jang, Johann Cho, Changyong Oh, Bo Sung Kim
Publikováno v:
Journal of Alloys and Compounds. 805:211-217
We examined the electrical properties of low-temperature-processed top-gate In-Sn-Ga-O (ITGO) thin-film transistors (TFTs) by rf/dc-sputtering with different oxygen partial pressures (PO2). As PO2 changed from 0 to 50.0%, the ITGO TFT showed various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3846b58421749c3d075eb55e6347f5f6
https://doi.org/10.1016/j.jallcom.2019.07.091
https://doi.org/10.1016/j.jallcom.2019.07.091
Publikováno v:
Journal of Alloys and Compounds. 875:160053
Top gate In-Ga-Sn-O (IGTO) thin-film transistors were fabricated with aluminum oxides (Al2O3) as gate insulators at a low temperature of 150 °C. Threshold voltage (Vth) of IGTO TFTs with Al2O3 grown by plasma-enhanced atomic layer deposition (PEALD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f3fed27d6c551a75a94afe7163ba933
https://doi.org/10.1016/j.jallcom.2021.160053
https://doi.org/10.1016/j.jallcom.2021.160053
Publikováno v:
IEEE Transactions on Electron Devices. 62:2710-2716
A general potential model is proposed for all types of double-gate junctionless FETs (DGJL-FETs), i.e., the symmetric versus asymmetric DG structures and the tied versus untied DG structures. The potential model is obtained with a simple form through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54d931c72d46b63c1367d4c6564be402
https://doi.org/10.1109/ted.2015.2436415
https://doi.org/10.1109/ted.2015.2436415
Autor:
Yang-Kyu Choi, Hee-Jeong Hong, Dong-Il Moon, Jee-Yeon Kim, Hyunjae Jang, Choong-Ki Kim, Jae-Sub Oh, Jeoung-Woo Kim, Minho Kang
Publikováno v:
IEEE Electron Device Letters. 35:1236-1238
A trigate FinFET with a charge trap gate dielectric is demonstrated for high-speed and long retention memory applications. For a capacitor-less dynamic memory cell, a nitride layer is utilized as a charge storage node and it is directly formed on a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef937f3e2e0a963afd2127ec08a1063a
https://doi.org/10.1109/led.2014.2365235
https://doi.org/10.1109/led.2014.2365235
Autor:
Hyunjae Jang, Myeong-Lok Seol, Ji-Min Choi, Changhoon Kim, Jun-Bo Yoon, Yang-Kyu Choi, Dongil Lee, Byung-Hyun Lee, Dong-Il Moon, Min-Wu Kim
Publikováno v:
Nanoscale. 6:7799
A mechanical and electrical transistor structure (METS) is proposed for effective voltage scaling. The sub-2 nm nanogap by atomic layer deposition (ALD) without stiction and the application of a dielectric with high-permittivity allowed the pull-in v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0717682aa6e78eab0fbffd086420fe6
https://doi.org/10.1039/c3nr06251a
https://doi.org/10.1039/c3nr06251a