Zobrazeno 1 - 10
of 164
pro vyhledávání: '"Hyungsoon Shin"'
Publikováno v:
IEEE Access, Vol 11, Pp 53932-53938 (2023)
In this study, a compact CMOS integrate-and-fire (I&F) neuron circuit embedding an operational transconductance amplifier (OTA) has been designed for enhancing the fidelity in output generation. The OTA block in the neuron circuit allows for maintain
Externí odkaz:
https://doaj.org/article/8f89df6db54846eaa94fcdfce736b318
Publikováno v:
IEEE Access, Vol 11, Pp 15909-15920 (2023)
In this study, we propose a deep neural network (DNN) model that extracts the subgap states in the channel layer of oxide thin-film transistors. We have developed a framework that includes creating a model training set, preprocessing the data, optimi
Externí odkaz:
https://doaj.org/article/6f4dabdb73d64cb29d1a6b2e0aa3c88b
Autor:
Arati Kumari Shah, Kannan Udaya Mohanan, Jisun Park, Hyungsoon Shin, Eou-Sik Cho, Seongjae Cho
Publikováno v:
IET Circuits, Devices and Systems, Vol 2023 (2023)
Neuron circuits are the fundamental building blocks in the modern neuromorphic system. Designing compact and low-power neuron circuits can significantly improve the overall area and energy efficiencies of a neuromorphic chip architecture. Here, pract
Externí odkaz:
https://doaj.org/article/170d7f7527dd4c319acacccdab3ee39e
Autor:
Dayoung Kim, Tae-Hyeon Kim, Yunyeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim, Hyungsoon Shin
Publikováno v:
IEEE Access, Vol 9, Pp 120901-120910 (2021)
In this paper, a physical unclonable function (PUF), a type of hardware security device, is proposed to overcome the limitations of existing security schemes. A $32\times 32$ crossbar array using TiOx/Al2O3- based memristors was fabricated, and elect
Externí odkaz:
https://doaj.org/article/4c52dcbcb2174f57ad004f6411cce2d9
Publikováno v:
Materials, Vol 16, Iss 1, p 182 (2022)
Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of
Externí odkaz:
https://doaj.org/article/2803dd8b2cb04e2c8e4791574c29b8fa
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1192-1196 (2018)
In this paper, the read margin (RM) and write power (WP) for various 3-D vertical resistive random-access memory (VRRAM) architectures and bias schemes are analyzed. The optimized bias scheme for each of the read and write operations is demonstrated
Externí odkaz:
https://doaj.org/article/dc1fe598f732437993aa5a2c8e2dfef0
Publikováno v:
Materials, Vol 14, Iss 20, p 6167 (2021)
The dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bend
Externí odkaz:
https://doaj.org/article/d10d8758063e4178af3b2574f8666edc
Publikováno v:
Micromachines, Vol 12, Iss 10, p 1209 (2021)
A capacitorless one-transistor dynamic random-access memory device (1T-DRAM) is proposed to resolve the scaling problem in conventional one-transistor one-capacitor random-access memory (1T-1C-DRAM). Most studies on 1T-DRAM focus on device-level oper
Externí odkaz:
https://doaj.org/article/7880077ea0d84f2b98d7a06efb0e8598
Publikováno v:
Micromachines, Vol 11, Iss 11, p 952 (2020)
A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM)
Externí odkaz:
https://doaj.org/article/7338c06d56d143b59d7829eb7139f435
Publikováno v:
Micromachines, Vol 11, Iss 2, p 228 (2020)
Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). P
Externí odkaz:
https://doaj.org/article/bf091c9032364f0488ed8263e34df201