Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hyungoo Jeon"'
Publikováno v:
Japanese Journal of Applied Physics. 39:L1152
We have used the cyclic current–voltage (I–V) technique to characterize border traps generated by Fowler-Nordheim tunnel (FNT) electron injection in metal-oxide-semiconductor (MOS) capacitors. We clarified that the current components measured fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25f487abf421637c8c66d9bacca10ddd
https://doi.org/10.1143/jjap.39.l1152
https://doi.org/10.1143/jjap.39.l1152
Autor:
Jongwoo Park, Hyun-Joon Cha, Back-Sung Kim, Yong-Bum Jo, June-Kyun Park, Sam-Young Kim, Sang-Cheol Shin, Man-Young Shin, Kyung-Il Ouh, Hyungoo Jeon
Publikováno v:
IEEE Transactions on Components & Packaging Technologies; Dec2007, Vol. 30 Issue 4, p731-744, 14p, 5 Black and White Photographs, 1 Diagram, 4 Charts, 9 Graphs
Publikováno v:
IEEE Transactions on Device & Materials Reliability; Mar2006, Vol. 6 Issue 1, p33-41, 9p
Publikováno v:
2007 IEEE International Interconnect Technology Conference; 2007, p155-157, 3p
Autor:
Hyungoo Jeon, Hyungoo Jeon, Sungwoo Choi, Sungwoo Choi, Byungchul Ahn, Byungchul Ahn, Yonghan Roh, Yonghan Roh
Publikováno v:
Japanese Journal of Applied Physics; November 2000, Vol. 39 Issue: 11 pL1152-L1152, 1p