Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Hyungjin Bang"'
Autor:
Takahiro Maruyama, Yasuyuki Kawamura, Shigeya Naritsuka, Michiko Kusunoki, Naomi Fujita, Hyungjin Bang
Publikováno v:
Diamond and Related Materials. 16:1078-1081
The effects of oxygen on the early stage of carbon nanocap and nanotube growth by surface decomposition of 6H–SiC(000-1) were investigated, using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Our results showed tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77e3434dd5c2e31faebf01d46068744e
https://doi.org/10.1016/j.diamond.2007.01.004
https://doi.org/10.1016/j.diamond.2007.01.004
Autor:
Michiko Kusunoki, Yasuyuki Kawamura, Hyungjin Bang, Tomoyuki Shiraiwa, Shigeya Naritsuka, Takahiro Maruyama, Naomi Fujita, Kenji Tanioku, Yoko Hozumi
Publikováno v:
Chemical Physics Letters. 423:317-320
Formation of nanosized cap structures on a thermally treated 6H–SiC(0 0 0 −1) substrate was investigated using atomic-resolution ultrahigh-vacuum scanning tunneling microscopy (UHV-STM). After removal of surface oxides by heating under UHV, clust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2be63fdbc699ac6037a83c817a2701f
https://doi.org/10.1016/j.cplett.2006.03.029
https://doi.org/10.1016/j.cplett.2006.03.029
Publikováno v:
Optical Materials. 28:759-762
Structural properties of Eu-doped GaN with the Eu concentration of about 2 at% were studied by cross sectional transmission electron microscope (TEM) observation, and electrical and optical properties of n-GaN/Eu-doped GaN/p-GaN structure were discus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f33c57d483c52e3ab66ff4c991434609
https://doi.org/10.1016/j.optmat.2005.09.016
https://doi.org/10.1016/j.optmat.2005.09.016
Autor:
Hyungjin Bang, Katsuhiro Akimoto, Jongwon Seo, H. Yanagihara, Junji Sawahata, E. Kita, Mikio Takiguchi
Publikováno v:
physica status solidi (c). 2:2458-2462
Structural and magnetic properties of Co doped GaN films grown by molecular beam epitaxy on sapphire(0001) substrates were studied. In the X-ray diffraction measurements and the extended X-ray absorption fine structure analysis, the existence of seco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29eb824f14819070ab2761b287c25a13
https://doi.org/10.1002/pssc.200461465
https://doi.org/10.1002/pssc.200461465
Publikováno v:
Science and Technology of Advanced Materials. 6:644-648
A single crystalline Eu-doped GaN was grown by gas-source molecular beam epitaxy and photoluminescence (PL) properties were studied. The PL spectra show red-emission at 622 nm originating from intra 4f–4f transition of Eu3+ ion without band-edge em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7289016fd75f214f988d0d9671aa74a
https://doi.org/10.1016/j.stam.2005.07.001
https://doi.org/10.1016/j.stam.2005.07.001
Autor:
Zhiqiang Li, Mikio Takiguchi, Shinichi Morishima, Junji Sawahata, Hyungjin Bang, Katsuhiro Akimoto, Yoshio Bando, Takaharu Tsukamoto, Jongwon Seo
Publikováno v:
physica status solidi (b). 241:2708-2712
The structural and optical properties of europium-doped GaN were studied. The Eu-related luminescence was observed at 622 nm and originated from the intra-4f transition of the Eu 3+ ion. The intensity of the luminescence increased as the Eu concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d393c96ce7a010780b6da38fa51519b
https://doi.org/10.1002/pssb.200405027
https://doi.org/10.1002/pssb.200405027
Autor:
Hyungjin Bang, Jeung Sun Ahn, Shinichi Morishima, Masanori Tanaka, Katsuhiro Akimoto, Takashi Sekiguchi
Publikováno v:
physica status solidi (c). :2639-2643
We argue that the charge-transfer state of Eu3+ due to an electron transfer from N to Eu plays important roles in the luminescence properties of GaN:Eu3+ grown by gas-source molecular beam epitaxy. On the basis of the excitation spectrum of the Eu3+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d7183a7c606f4de458b24944c7f9e9a
https://doi.org/10.1002/pssc.200303447
https://doi.org/10.1002/pssc.200303447
Autor:
Hyungjin Bang, Akira Yanase, R. Asano, Katsuhiro Akimoto, N. Umesaki, Shuichi Emura, Hajime Asahi, Hidekazu Tanaka, T. Honma, Yi-Kai Zhou, Masahiko Hashimoto
Publikováno v:
physica status solidi (c). :2864-2868
Magnetic properties of the rare-earth-doped III-nitride semiconductor Ga1−xEuxN (x = 0.02) were studied together with X-ray absorption fine structure (XAFS) measurements. Experimental results show that the GaEuN layer is not only paramagnetic origi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da609093ebbdbbc140734694b68a3c2f
https://doi.org/10.1002/pssc.200303516
https://doi.org/10.1002/pssc.200303516
Autor:
Hyungjin Bang, Katsuhiro Akimoto, H. Yanagihara, Junji Sawahata, E. Kita, M. Tsunemi, Guanxi Piao
Publikováno v:
physica status solidi (c). :2874-2877
Magnetic properties of Er-doped GaN and Tb-doped GaN films grown by molecular beam epitaxy (MBE) on sapphire substrates (0001) were studied. Magnetization measurements were carried out under magnetic fields ranging from −5 to 5 T, and both samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa6ab4c926c785e21ab12a326e4f924f
https://doi.org/10.1002/pssc.200303486
https://doi.org/10.1002/pssc.200303486
Autor:
Katsuhiro Akimoto, Hajime Asahi, Hyungjin Bang, Akira Yanase, Hiroyuki Tanaka, Masahiko Hashimoto, Ryo Asano
Publikováno v:
Japanese Journal of Applied Physics. 42:L1112-L1115
Magnetic properties of molecular-beam epitaxy grown Eu-doped GaN are studied. At high temperatures, clear hysteresis and clear saturation indicating the existence of a ferromagnetic-like phase are observed in the magnetization versus magnetic curves,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0048fa9846dd7ace3df5cd59c6a8b93
https://doi.org/10.1143/jjap.42.l1112
https://doi.org/10.1143/jjap.42.l1112