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Autor:
Hyung-Sub Song, Ga-Won Lee, Jong-Kwan Shin, Jae-Nam Yu, Sung-Yong Jang, Ho-Ryung Lee, Sung-Kyu Kwon, Hi-Deok Lee, Sun-Ho Oh
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 27:438-442
Channel length dependence of NBTI (negative bias temperature instablilty) and CHC (channel hot carrier) characteristics in PMOSFET is studied. It has been considered that HC lifetime of PMOSFET is larger than NBTI lifetime. However, it is shown that