Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Hyung-Seok Jung"'
Publikováno v:
IEEE Electron Device Letters. 27:435-438
For nMOS devices with HfO/sub 2/, a metal gate with a very low workfunction is necessary. In this letter, the effective workfunction (/spl Phi//sub m,eff/) values of ScN/sub x/ gates on both SiO/sub 2/ and atomic layer deposited (ALD) HfO/sub 2/ are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da8c7c72c1fd0db9b3ef0450a189f5c
https://doi.org/10.1109/led.2006.874129
https://doi.org/10.1109/led.2006.874129
Autor:
Hyung-Seok Jung, Yun-Seok Kim, Jong Pyo Kim, Jung Hyoung Lee, Jong-Ho Lee, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh, Hyuk Ju Ryu, Chang-Bong Oh, Young-Wug Kim, Kyung-Hwan Cho, Hion-Suck Baik, Young Su Chung, Hyo Sik Chang, Dae Won Moon
Publikováno v:
Digest. International Electron Devices Meeting; 2002, p853-856, 4p
Autor:
Jung-Hyoung Lee, Jong Pyo Kim, Jong-Ho Lee, Yun-Seok Kim, Hyung-Seok Jung, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh, Mun-Mo Jeong, Kyu-Taek Hyun, Hion-Suck Baik, Young Su Chung, Xinye Liu, Ramanathan, S., Seidel, T., Winkler, J., Londergan, A., Hae young Kim, Jung Min Ha, Nam Kyu Lee
Publikováno v:
Digest. International Electron Devices Meeting; 2002, p221-224, 4p
Publikováno v:
IEEE Electron Device Letters; Jun2006, Vol. 27 Issue 6, p435-438, 4p, 4 Diagrams
Publikováno v:
Applied Physics Letters. 86:092107
The electrical characteristics were evaluated for the metal-oxide-semiconductor (MOS) devices with Ti and Pt gates on the atomic-layer-deposited (ALD) HfO2. The equivalent oxide thickness (EOT) of the Ti gate is shown to be nearly the same as that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::547ef76c806a81266b0878d53bcaf5e4
https://doi.org/10.1063/1.1871362
https://doi.org/10.1063/1.1871362
Publikováno v:
Applied Physics Letters; 2/28/2005, Vol. 86 Issue 9, p092107, 3p, 4 Graphs
Autor:
Hyuk-Ju Ryu, Woo-Young Chung, You-Jean Jang, Yong-Jun Lee, Hyung-Seok Jung, Chang-Bong Oh, Hee-Sung Kang, Young-Wug Kim
Publikováno v:
2004 Digest of Technical Papers. 2004 Symposium on VLSI Technology; 2004, p38-39, 2p
Autor:
Jong-Ho Lee, Jung-Hyoung Lee, Yun-Seok Kim, Hyung-Seok Jung, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303); 2002, p114-115, 2p
Autor:
Jong-Ho Lee, Yun-Seok Kim, Hyung-Seok Jung, Jung-Hyoung Lee, Nae-In Lee, Ho-Kyu Kang, Ja-Hum Ku, Hee Sung Kang, Youn-Keun Kim, Kyung-Hwan Cho, Kwang-Pyuk Suh
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303); 2002, p84-85, 2p
Autor:
Chang-Bong Oh, Hyuk-Ju Ryu, Hee-Sung Kang, Myoung-Hwan Oh, Jong-Ho Lee, Nae-In Lee, Hyun-Woo Lee, Cheol-Hee Jun, Young-Wug Kim, Kwang-Pyuk Suh
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407); 2003, p71-72, 2p