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Autor:
Sung Kil Cho, Hyung Su Choe, Dong Keun Lee, Pyung Yong Um, Hai Won Kim, Sang Ho Woo, Chang-Koo Kim, Yil Wook Kim
Publikováno v:
ECS Transactions. 11:601-606
Polysilicon (poly-Si) is mainly used as gate material for metal-oxide-semiconductor (MOS) based devices. As the dimensions of the MOS based devices keep shrinking, their performance depends critically on the film properties such as surface morphology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be8080e55ae097012085a3057a964701
https://doi.org/10.1149/1.2779594
https://doi.org/10.1149/1.2779594
