Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hyung Joan Yoo"'
Publikováno v:
1995 IEEE International SOI Conference Proceedings.
Interface trap density and doping density of grounded body SOI (GBSOI) nMOSFET were analysed by charge pumping current and subthreshold swing measurements. Especially, measurements for D/sub it/ and N/sub A/ of the sidewall channel inducing current l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd2e4dd8dafd4eb84481a493956daee
https://doi.org/10.1109/soi.1995.526471
https://doi.org/10.1109/soi.1995.526471
Publikováno v:
1995 IEEE International SOI Conference Proceedings; 1995, p82-83, 2p