Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Hyung Jo Park"'
Publikováno v:
Science of Advanced Materials. 10:225-228
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25c85e8be25e5654937a4d048574a498
https://doi.org/10.1166/sam.2018.2956
https://doi.org/10.1166/sam.2018.2956
Publikováno v:
Journal of the Korean Physical Society. 68:159-163
This study examined the electrical and the optical characteristics of GaN-based vertical-injection light-emitting diodes (VI-LEDs) with various numbers of via holes. As the number of via holes was increased from 1 to 11, the operating voltage at 350
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95e45540777bc28008d0d0714759356c
https://doi.org/10.3938/jkps.68.159
https://doi.org/10.3938/jkps.68.159
Publikováno v:
Journal of the Microelectronics and Packaging Society. 22:71-76
Department of Energy and Electrical Engineering, Korea Polytechnic University, Siheung-si, Gyeonggi-do 15073, Korea(Received December 14, 2015: Corrected December 22, 2015: Accepted December 23, 2015)초록: 최근 Light Emitting Diode (LED)의 효
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff3f0dea66a3b4dde43e63245f98cca3
https://doi.org/10.6117/kmeps.2015.22.4.071
https://doi.org/10.6117/kmeps.2015.22.4.071
Publikováno v:
Korean Journal of Metals and Materials. 53:302-305
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5ab3909a5f99041555dfa0de2ad1a11
https://doi.org/10.3365/kjmm.2015.53.4.302
https://doi.org/10.3365/kjmm.2015.53.4.302
Autor:
Jong Hyeob Baek, Seung-Jae Lee, Dae Woo Jeon, Cheul-Ro Lee, Seong-Ran Jeon, Jae-Chul Song, Junbeom Park, Hyung-Jo Park
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:Q92-Q95
A crack-free, uniform InGaN/GaN light-emitting diode (LED) structure with strain-engineered buffer layer was grown on an 8-inch diameter Si(111) substrate. The full width at half maximum (FWHM) of (002) and (102) ω-scan is 280 and 420 arcsec, respec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5f94d144bec5ffb8aef4c2876ad25dd
https://doi.org/10.1149/2.0151508jss
https://doi.org/10.1149/2.0151508jss
Autor:
Hyung Jo Park, Sang-Mook Kim, Jong Hyeob Baek, Ja-Yeon Kim, Tak Jeong, Sang Hern Lee, Hwa Sub Oh
Publikováno v:
Topics in Applied Physics ISBN: 9789811037542
This chapter deals with methods for fabricating high-efficient light-emitting diodes (LEDs) with higher light extraction efficiency (LEE). Some LED prototypes are then reviewed to investigate how their performance was enhanced by utilizing a variety
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee039dc6e8462fadf140c2deda0738f
https://doi.org/10.1007/978-981-10-3755-9_12
https://doi.org/10.1007/978-981-10-3755-9_12
Autor:
Younghee Ko, Jun-Seok Ha, Tak Jeong, Hyojung Bae, Katsushi Fujii, Hyung-Jo Park, Tae-Sung Oh, Hyo-Jong Lee, Eun-Sook Kim
Publikováno v:
Journal of The Electrochemical Society. 162:H19-H22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fc1c10dbde54513e84c1ec2f03ad0b6
https://doi.org/10.1149/2.0501501jes
https://doi.org/10.1149/2.0501501jes
Autor:
Su Jin Kim, Hee Woong Shin, Ho Young Chung, Tak Jeong, Byeong Ryong Lee, Tae Geun Kim, Hyung Jo Park, Kyeong Heon Kim
Publikováno v:
ACS Applied Materials & Interfaces. 6:16601-16609
This paper reports improvements in the electrical and optical properties of blue-emission gallium nitride (GaN)-based thin-film light-emitting diodes (TFLEDs) after laser-based Si doping (LBSD) of a nitrogen-face n-GaN (denoted as hereafter n-GaN) la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c386a0a24d23ceeadc8fce987393b2e
https://doi.org/10.1021/am5031165
https://doi.org/10.1021/am5031165
High Efficiency InGaN Blue Light-Emitting Diode With ${>}{\rm 4}\hbox{-}{\rm W}$ Output Power at 3 A
Autor:
Tak Jeong, Jong-Hyeob Baek, Han-Youl Ryu, Jun-Seok Ha, Hyung-Jo Park, Hwa Sub Oh, Jin-Woo Ju, Guen-Hwan Ryu
Publikováno v:
IEEE Photonics Technology Letters. 26:649-652
This letter reports high-power and high-efficiency characteristics of the InGaN-based blue light-emitting diode (LED) operating at > 10-W electrical input power in a single-chip package. The LED chip is fabricated as a vertical-injection structure wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb4636544d8f95f980d3eaa932f2695e
https://doi.org/10.1109/lpt.2014.2301874
https://doi.org/10.1109/lpt.2014.2301874
Autor:
Hyung-Jo Park, Ajit P. Paranjpe, Jong Hyeob Baek, Balakrishnan Krishnan, Dong Soo Lee, Dae Woo Jeon, Junbeom Park, Hongwei Li, Jie Su, Seung-Jae Lee
Publikováno v:
ECS Transactions. 61:71-78
GaN based light-emitting diodes(LEDs) grown on a Si substrate is one of promising future technologies in LED industry due to its scalability and costeffectiveness compare to the conventional sapphire based LEDs.One of major technical issues in GaN/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff9da7701a1a9d514d1069c9fe8941ce
https://doi.org/10.1149/06104.0071ecst
https://doi.org/10.1149/06104.0071ecst