Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Hyundoek Yang"'
Publikováno v:
IEEE Electron Device Letters. 27:435-438
For nMOS devices with HfO/sub 2/, a metal gate with a very low workfunction is necessary. In this letter, the effective workfunction (/spl Phi//sub m,eff/) values of ScN/sub x/ gates on both SiO/sub 2/ and atomic layer deposited (ALD) HfO/sub 2/ are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da8c7c72c1fd0db9b3ef0450a189f5c
https://doi.org/10.1109/led.2006.874129
https://doi.org/10.1109/led.2006.874129
Autor:
Seonghyun Kim, Sanghun Jeon, Hyunsang Hwang, Sang-Soo Choi, Man Chang, Hyundoek Yang, Dong-Yu Kim, Chang-Seok Kim
Publikováno v:
Microelectronic Engineering. 80:264-267
The charge trapping characteristics were evaluated for Al2O3 with metal-nitride (TiN) nanocrystals, which was simply prepared by rf magnetron co-sputtering method, as a new charge trapping layer of a metal-oxide-nitride-oxide-silicon-type nonvolatile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8c738ad348d7bed39c4daf2e1e1b9a
https://doi.org/10.1016/j.mee.2005.04.078
https://doi.org/10.1016/j.mee.2005.04.078
Publikováno v:
Japanese Journal of Applied Physics. 41:2390-2393
We investigated electrical and material properties of an untrathin nanolaminate (Al2O3/ZrO2/Al2O3) structure, prepared by atomic-layer chemical vapor deposition (ALCVD), for use in metal-oxide-semiconductor gate dielectric applications. The propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb8c40d680fdacbb45744c6ac54c33a7
https://doi.org/10.1143/jjap.41.2390
https://doi.org/10.1143/jjap.41.2390
Autor:
Hyundoek Yang, Byoungchul Park, Chel-Jong Choi, Hyunsang Hwang, Tae-Youb Kim, Ranju Jung, Myungsim Jun, Moongyu Jang, Seongjae Lee, Man Chang, Yarkyueon Kim
Publikováno v:
Japanese Journal of Applied Physics. 46:125-127
We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function (Φm,eff) of a Pt–Er alloy metal gate on a HfO2 film. By considering the presence of an interfacial layer (IL) between the HfO2 film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021bc09cb1d63e2f0059926dc4bd3608
https://doi.org/10.1143/jjap.46.125
https://doi.org/10.1143/jjap.46.125
Publikováno v:
Japanese Journal of Applied Physics. 45:L83-L85
For n-type metal–oxide–semiconductor (NMOS) devices, a metal gate with a very low effective work function (Φm,eff) is necessary. In this paper, we evaluate the Φm,eff values of ScNx gates on both SiO2 and atomic-layer-deposited (ALD) HfO2. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f87dbf98c7625c66925d3aa46376e20
https://doi.org/10.1143/jjap.45.l83
https://doi.org/10.1143/jjap.45.l83
Autor:
Kyung-youl Min, Dae Won Moon, Hyo Sik Chang, Sangmu Choi, Hyunsang Hwang, Hyung-Ik Lee, Hyundoek Yang
Publikováno v:
Applied Physics Letters. 80:386-388
The electrical and structural characteristics of an ultrathin gate dielectric, thermally grown on 4° tilted wafer has been investigated. Compared with a control wafer, a relaxation of the Si lattice strain at the SiO2/Si(001) interface was observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8a68215afba8f51b6029dba98a463a0
https://doi.org/10.1063/1.1435404
https://doi.org/10.1063/1.1435404
Publikováno v:
Applied Physics Letters. 79:4408-4410
In this letter, we describe a process for the preparation of high-quality tantalum oxynitride (TaOxNy) with zirconium silicate (ZrSixOy) as an interfacial layer for use in gate dielectric applications. Compared with conventional chemical oxide and ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7603634f0442a32516770fc8cd49a07
https://doi.org/10.1063/1.1427155
https://doi.org/10.1063/1.1427155
Publikováno v:
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::470bf9d38147f42de1dbd49a843e8eee
https://doi.org/10.7567/ssdm.2003.c-2-4
https://doi.org/10.7567/ssdm.2003.c-2-4
Autor:
Taesung Jang, Hyunjun Sim, Kiju Im, Hyundoek Yang, Hye-Lan Lee, Sanghun Jeon, Sangmu Choi, Hyunsang Hwang
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
In this paper, we report on an investigation of the electrical characteristics of various amorphous lanthanide oxides prepared by e-beam evaporation. Excellent electrical characteristics were found for the amorphous lanthanide oxide including a high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c9ed7d1c8ff782eccdc0b274af4496
https://doi.org/10.1109/iedm.2001.979545
https://doi.org/10.1109/iedm.2001.979545
Publikováno v:
MRS Proceedings. 670
This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaOxNy) with zirconium silicate (ZrSixOy) as an interfacial layer for use in gate dielectric applications. Compared with conventional native silicon oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81682fdd3915423a12f916c8ad5f282f
https://doi.org/10.1557/proc-670-k4.6
https://doi.org/10.1557/proc-670-k4.6