Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Hyundai Park"'
Autor:
Minh A. Tran, Chong Zhang, Theodore J. Morin, Lin Chang, Sabyasachi Barik, Zhiquan Yuan, Woonghee Lee, Glenn Kim, Aditya Malik, Zeyu Zhang, Joel Guo, Heming Wang, Boqiang Shen, Lue Wu, Kerry Vahala, John E. Bowers, Hyundai Park, Tin Komljenovic
Publikováno v:
Nature, vol 610, iss 7930
Integrated photonics has profoundly affected a wide range of technologies underpinning modern society1–4. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency5,6. Over the las
Publikováno v:
Advances in Optics and Photonics. 14:404
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics research. Several important breakthroughs were made in this field in the past few years. In this article, we review the most recent advances in light source
Publikováno v:
Conference on Lasers and Electro-Optics.
We demonstrate heterogeneously integrated gallium arsenide (GaAs) on silicon nitride (SiN) lasers using wafer-scale integration operating at a wavelength below Si bandgap with high uniformity enabled by advanced lithography and optimized fabrication.
Autor:
John E. Bowers, Theodore J. Morin, Lin Chang, Joel Guo, Chenlei Li, Tin Komljenovic, Minh A. Tran, Hyundai Park, Warren Jin
Publikováno v:
Optica. 8:755
We demonstrate a CMOS-foundry-based S i 3 N 4 photonic platform at blue and violet wavelengths that exhibits record-high intrinsic Qs of around 6 M at 453 nm and < 1 d B / c m waveguide propagation loss of around 405 nm.
Publikováno v:
Optica. 7:425
This erratum corrects a typographical error which appeared in Optica 7, 336 (2020).OPTIC82334-253610.1364/OPTICA.391809
Publikováno v:
Optica. 7:336
We solve one of the key photonic challenges–bringing wafer-scale electrically pumped optical sources to a silicon nitride photonic platform with the world’s first demonstration of electrically pumped heterogeneous GaAs-on-SiN lasers operating at
Publikováno v:
IEEE Journal of Quantum Electronics. 48:1512-1518
This paper investigates the characteristic temperatures of hybrid silicon lasers by decomposing them into the temperature dependency of modal gain, transparent current density, internal loss, and injection efficiency under pulsed operation, and compa
Autor:
In Gyoo Kim, Jiho Joo, Gyungock Kim, Sanghoon Kim, Jaegyu Park, Myung-Joon Kwack, Sang-Gi Kim, Hyundai Park, Ki-Seok Jang, Sun Ae Kim, Jin Hyuk Oh
Publikováno v:
Optical Interconnects XVI.
We present new scheme for chip-level photonic I/Os, based on monolithically integrated vertical photonic devices on bulk silicon, which increases the integration level of PICs to a complete photonic transceiver (TRx) including chip-level light source
Autor:
Myung-Joon Kwack, Jin Hyuk Oh, Jaegyu Park, Jiho Joo, Gyungock Kim, Ki-Seok Jang, Hyundai Park, Sang-Gi Kim
Publikováno v:
SPIE Proceedings.
Advancement of silicon photonics technology can offer a new dimension in data communications with un-precedent bandwidth. Increasing the integration level in the silicon photonics is required to develop compact high-performance chip-level optical int
Autor:
Ling Liao, Hyundai Park, Alexander W. Fang, Brian R. Koch, Hui-Wen Chen, Richard Jones, Di Liang, Matthew N. Sysak, John E. Bowers, Jock Bovington, Matt Jacob-Mitos, Kristi Wong, Yongbo Tang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:671-688
The device and integration technology for silicon photonic transmitters are reviewed in this paper. The hybrid silicon platform enables on-chip lasers to be fabricated with silicon photonic circuits and can be integrated in the CMOS back-end flow. La