Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Hyunchul Sagong"'
Autor:
Minki Suh, Minsang Ryu, Jonghyeon Ha, Minji Bang, Dabok Lee, Hojoon Lee, Hyunchul Sagong, Jungsik Kim
Publikováno v:
IEEE Access, Vol 12, Pp 155119-155124 (2024)
This study investigates the row hammer tolerance and potential degradation by capacitive crosstalk (CC) and parasitic bipolar junction transistor (BJT) effect in vertically stacked dynamic random-access memory (VS-DRAM) using technology computer-aide
Externí odkaz:
https://doaj.org/article/4f78157441be421d9843e6123438207c
Autor:
Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim
Publikováno v:
IEEE Access, Vol 12, Pp 130347-130355 (2024)
The effects of single event upset (SEU) by alpha particles and heavy ions on the data flip of a 3 nm technology node gate-all-around (GAA) nanosheet field-effect transistor (NSFET) 6T static random-access memory (SRAM) cell was studied through techno
Externí odkaz:
https://doaj.org/article/c729c86dcf4b40dd8aafed6967dcc577
Publikováno v:
Sensors, Vol 24, Iss 3, p 975 (2024)
Hydrogen fuel cell vehicles have gained more attention as future automobiles due to their environmental benefits and extended driving ranges. Concurrently, the global hydrogen sensor market is also experiencing substantial growth. These sensors are i
Externí odkaz:
https://doaj.org/article/6767cd4dbfb3461e9b5612f8b91df0c7
Autor:
Maihan Nguyen, Hyunchul Sagong, Mohammad Shahriar Rahman, Rakesh Ranjan, Ki-Don Lee, Susannah Laure Prater, Minhyo Kang, Caleb Dongkyun Kwon, Ahmed Shariq, Shamas Musthafa Ummer, Charles Briscoe Larow, Pavitra Ramadevi Perepa, Ashish Kumar Jha, Hwa-Sung Rhee, Iqbal Mahmud
Publikováno v:
IRPS
Reliability of Core and IO FinFET is extensively investigated with various process steps at Fin, Source/ Drain, sacrificial Gate-Metal, and High-Pressure D2 Anneal. By modulating the process knobs, we quantified the effect of oxide traps (at bulk or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8353026f93a67445c925c2a882169b61
https://doi.org/10.1109/irps46558.2021.9405134
https://doi.org/10.1109/irps46558.2021.9405134
Autor:
Hyewon Shim, Hyunchul Sagong, Junekyun Park, Jinju Kim, Hwa-Sung Rhee, Hai Jiang, Eun-Cheol Lee, Kihyun Choi
Publikováno v:
IRPS
Time dependent variability has become a significant concern for End-of-lifetime(EOL) reliability prediction for advanced technology with continuous scaling. In this work, we explore time dependent variability of BTI and HCI on our advanced FinFET tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8304388604ba85cbf4b415ebb79b07a3
https://doi.org/10.1109/irps46558.2021.9405129
https://doi.org/10.1109/irps46558.2021.9405129
Autor:
Myungsoo Yeo, Hyunchul Sagong, Eun-Cheol Lee, Kihyun Choi, Tae-Young Jeong, Minjung Jin, Hai Jiang, Hwa-Sung Rhee
Publikováno v:
2020 IEEE International Integrated Reliability Workshop (IIRW).
Self-heating effect (SHE, $\Delta T_{sh}$) has been aggravated due to compact layout footprint in advanced FinFET technology, which needs a significant concern for device performance, variability and reliability co-optimization. In this paper, we cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::759391534604a5f7823384432169023d
https://doi.org/10.1109/iirw49815.2020.9312859
https://doi.org/10.1109/iirw49815.2020.9312859
Autor:
Minjung Jin, Soonwan Kwon, Taiki Uemura, Y. Kim, J.M. Park, Hwa-Sung Rhee, Young-Joon Cho, Mi-Hyang Lee, Bomi Kim, Kihyun Choi, Tae-Young Jeong, Myeong-cheol Kim, Hyewon Shim, Hai Jiang, Hyunchul Sagong, K. Kim, Won-Jin Kim, Hyeonwoo Nam, D. Mun, Sangwoo Pae, E. Kwon, Myungsoo Yeo, Bang-Lin Lee
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
The product reliability of 7nm FinFET technology is demonstrated with 5G SoC platform. RO aging and other highspeed operating 5G IPs show an expected reliability model behavior, which has further improvement of frequency noise reduction through 3-pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::612047cdc3eb0b3d16f46a21e99263a3
https://doi.org/10.1109/vlsitechnology18217.2020.9265018
https://doi.org/10.1109/vlsitechnology18217.2020.9265018
Autor:
Timothy Basford, Charles Briscoe Larow, Rakesh Ranjan, Hyunchul Sagong, Gil Heyun Choi, Hwa-Sung Rhee, David J. Moreau, Pavitra Ramadevi Perepa, Maihan Nguyen, Ki-Don Lee, Minhyo Kang, Bong Ki Lee, Carolyn Cariss-Daniels, M. Shahriar Rahman, Colby Callahan
Publikováno v:
IRPS
Basic Reliability of IO FinFET is studied with various process options and extensive trap density investigation. It is observed that the NBTI margin on High Performance IO pFET is lowered by additional treatment to maintain the taller Fin profile. Tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8c4110697aa876f94784c46bfcce66
https://doi.org/10.1109/irps45951.2020.9129066
https://doi.org/10.1109/irps45951.2020.9129066
Autor:
Hwa-Sung Rhee, Tae-Young Jeong, Junekyun Park, Hyewon Shim, Brandon Lee, Taiki Uemura, Yoohwan Kim, Hyunchul Sagong, Yongsung Ji, Sangwoo Pae, Jinju Kim, Dongkyun Kwon, Hai Jiang
Publikováno v:
IRPS
Self-heating effect (SHE, ∆T sh ) has become a significant concern for device performance, variability and reliability co-optimization due to more confined layout geometry and lower-thermal-conductivity materials adopted in advanced technology, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6521431ade2f3e6169f88462c53fb75
https://doi.org/10.1109/irps45951.2020.9128322
https://doi.org/10.1109/irps45951.2020.9128322
Publikováno v:
IRPS
Localized layout effect (LLE) has become a significant concern for device area, performance and reliability co-optimization due to more compact layout footprint in advanced technology, which brings about complex strain effect in the channel. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81662716ea8f06b0f19f0760a5877cda
https://doi.org/10.1109/irps.2019.8720409
https://doi.org/10.1109/irps.2019.8720409