Zobrazeno 1 - 6
of 6
pro vyhledávání: '"HyunJoon Jeong"'
Autor:
Hyunjoon Jeong, Taewan Kim
Publikováno v:
Nuclear Engineering and Technology, Vol 56, Iss 6, Pp 2002-2010 (2024)
Korea Atomic Energy Research Institute (KAERI) has operated an integral effect test facility, the Advanced Thermal-Hydraulic Test Loop for Accident Simulation (ATLAS), with reference to the APR1400 (Advanced Power Reactor 1400) for tests for transien
Externí odkaz:
https://doaj.org/article/476aac84b70546beaec2a3639e9e1052
Autor:
Jinyoung Choi, Hyunjoon Jeong, Sangmin Woo, Hyungmin Cho, Yohan Kim, Jeong-Taek Kong, Soyoung Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 65-73 (2024)
The artificial neural network (ANN)-based compact model has significant advantages over physics-based standard compact models such as BSIM-CMG because it can achieve higher accuracy over a wide range of geometric parameters. This makes it particularl
Externí odkaz:
https://doaj.org/article/049f485f178443b79577e12895cf46a6
Autor:
Hyunjoon Jeong, Sangmin Woo, Jinyoung Choi, Hyungmin Cho, Yohan Kim, Jeong-Taek Kong, Soyoung Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 153-160 (2023)
In this paper, we present a fast and expandable artificial neural network (ANN)-based compact model and parameter extraction flow to replace the existing complicated compact model implementation and model parameter extraction (MPE) method. In additio
Externí odkaz:
https://doaj.org/article/0cc50706c7ca472e91db8af1acef6556
Autor:
Hyunjoon Jeong, Taewan Kim
Publikováno v:
Kerntechnik.
Korea Atomic Energy Research Institute (KAERI) has operated an integral effect test facility, the Advanced Thermal-Hydraulic Test Loop for Accident Simulation (ATLAS) with reference to the Advanced Power Reactor 1400 MW (APR1400) for transient and de
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 69:450-453
Publikováno v:
Electronics; Volume 11; Issue 17; Pages: 2761
In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generation nano-device. To extract data reflecting t