Výsledky vyhledávání - "Hyun-Phil Kim"

Integration and Interconnect Reliability of Warm A1 Process with CVD-A1 seed layer deposited using a novel precursor of TMAAB (trimethylarninealane borane)

Autor: Hyeong-Joon Kim, In-Cheol Ryu, Hyosang Kang, Byung-Soo Eun, Sung-Won Lim, Choon-Hwan Kim, Hyun-Phil Kim, Il-Cheol Rho, Soo-Hyun Kim, Yong-Sun Sohn

Publikováno v: 2007 IEEE International Interconnect Technology Conferencee.

Al-plug process using chemical vapor deposited (CVD) Al seed layer prepared with trimethylaminealane borane (TMAAB) as a precursor lias been developed for sub-60 mn design-rule dynamic random access memory (DRAM). In terms of the precursor stability

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::28a201770acc97554193e2b86fa9e90f
https://doi.org/10.1109/iitc.2007.382336

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Conference

Integration and Interconnect Reliability of Warm A1 Process with CVD-A1 seed layer deposited using a novel precursor of TMAAB (trimethylarninealane borane).

Autor: Choon-Hwan Kim, Sung-Won Lim, Hyun-Phil Kim, In-Cheol Ryu, Byung-Soo Eun, Soo-Hyun Kim, Il-Cheol Rho, Yong-Sun Sohn, Hyo-Sang Kang, Hyeong-Joon Kim

Publikováno v: 2007 IEEE International Interconnect Technology Conference; 2007, p43-45, 3p

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