Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Hyun-Mo Lee"'
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimizati
Externí odkaz:
https://doaj.org/article/d8eedc00bdd94e3391f042da103c958d
Publikováno v:
ACS Omega, Vol 2, Iss 3, Pp 765-773 (2017)
Externí odkaz:
https://doaj.org/article/f933d593001549409b2d1a6645316879
Autor:
Hyun Mo Lee
Publikováno v:
The Journal of Korean Evangelical Missiological Society. 57:115-151
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5680121585840f6d89489f001331d3c5
https://doi.org/10.20326/kems.57.1.115
https://doi.org/10.20326/kems.57.1.115
Publikováno v:
ACS Applied Materials & Interfaces. 13:28493-28502
Atomic layer deposition (ALD) is a promising deposition method to precisely control the thickness and metal composition of oxide semiconductors, making them attractive materials for use in thin-film transistors because of their high mobility and stab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b8a79015308c35ded78b9282d00251
https://doi.org/10.1021/acsami.1c06575
https://doi.org/10.1021/acsami.1c06575
Publikováno v:
IEEE Electron Device Letters. 41:401-404
High mobility thin film transistors (TFTs) based on zinc oxynitride (ZnON) semiconductor were fabricated onto polyethylene-2.6-naphthalate (PEN) substrates. The application of a dual gate structure enhanced the field-effect mobility from 65.8 to 147
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e88a2169ca414dfad1d229dfa1fe329
https://doi.org/10.1109/led.2020.2965402
https://doi.org/10.1109/led.2020.2965402
Autor:
Eun Jae Park, Hyun-Jun Hwang, Jin-Seong Park, Hyun Mo Lee, Ki Lim Han, Hak-Sung Kim, Kyung Chul Ok, Hyun Jun Jeong, Chung Hyeon Ryu
Publikováno v:
ACS Applied Materials & Interfaces. 11:4152-4158
In this study, we investigated the effects of intense pulsed light (IPL) on the electrical performance properties of zinc oxynitride (ZnON) thin films and thin-film transistors (TFTs) with different irradiation energies. Using the IPL process on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d16ca65a4efa282e8838cbd1f110957
https://doi.org/10.1021/acsami.8b20291
https://doi.org/10.1021/acsami.8b20291
Publikováno v:
ACS Omega, Vol 2, Iss 5, Pp 2046-2046 (2017)
Externí odkaz:
https://doaj.org/article/3dd6a6b4e87d4221ad0dba0a20ba16e3
Publikováno v:
ACS applied materialsinterfaces. 13(15)
Indium-gallium-zinc oxide- and zinc oxynitride-based heterojunction phototransistors were successfully demonstrated to control the persistent photoconduction (PPC) effect and be also responded sensitively at the range from visible to near-infrared. Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89e08032124c3461234e8566f4c4d91e
https://pubmed.ncbi.nlm.nih.gov/33844508
https://pubmed.ncbi.nlm.nih.gov/33844508
Autor:
Mi Yoo, Hyun Mo Lee, Hyun You Kim, Park Jung-Woo, Jung Hoon Lee, Yeonjin Yi, Donghee Kang, Jin-Seong Park, Wan Ho Choi
Publikováno v:
ACS Applied Materials & Interfaces. 10:33335-33342
SnOx thin films were successfully deposited by the thermal atomic layer deposition (ALD) method using N,N′-tert-butyl-1,1-dimethylethylenediamine stannylene(II) as a precursor and ozone and water as reactants. The growth of SnO and SnO2 films could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f74662fd3dda308dbfa14a489280a411
https://doi.org/10.1021/acsami.8b12251
https://doi.org/10.1021/acsami.8b12251
Publikováno v:
Journal of Materials Chemistry C. 6:5171-5175
Zinc oxynitride (ZnON) is a relatively novel class of material, often regarded as a promising alternative to oxide semiconductors, owing to its relatively high electron mobility and low concentration of oxygen-related defects that affect the device r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbbdffcba0aa398178feb328567429fd
https://doi.org/10.1039/c8tc01064a
https://doi.org/10.1039/c8tc01064a