Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Hyun-Kee Chang"'
Autor:
Beibei Han, Yuandong Gu, Peter Hyun Kee Chang, Navab Singh, Guoqiang Wu, Leong Ching Wai, Daw Don Cheam
Publikováno v:
IEEE Transactions on Industrial Electronics. 66:3835-3842
This paper presents the development of an 8-in six-degree-of-freedom (DOF) inertial sensor based on an advanced capacitive inertial sensor fabrication platform. The platform integrates three-axis gyroscopes and three-axis accelerometers on the same c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e63c31d52bb1966ed640fc0b715ebe35
https://doi.org/10.1109/tie.2018.2851946
https://doi.org/10.1109/tie.2018.2851946
Publikováno v:
A-SSCC
A 8-chanenel interface IC for ambient vibration energy harvesting from broadband MEMS transducer array is presented. A rectifier-free synchronized electrical charging extraction (RF-SECE) architecture is proposed to harvest low voltage ambient vibrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0821d628a03b9065c6df3e6cdd8f672a
https://doi.org/10.1109/a-sscc48613.2020.9336133
https://doi.org/10.1109/a-sscc48613.2020.9336133
Autor:
Yao Zhu, Peter Hyun Kee Chang, Eldwin J. Ng, Nishida Yoshio, Zhipeng Ding, Navab Singh, Guoqiang Wu, Nan Wang, Yuandong Gu
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
A thin-film piezoelectric-on-silicon (TPoS) structured Lame mode resonator is experimentally reported in this work. The resonator is of a ring shape design and fabricated on the in-house AlN-on-SOI (silicon-on-insulator) platform. The thickness of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb1c2a73a72150d7750d0534037f499a
https://doi.org/10.1109/eptc.2018.8654380
https://doi.org/10.1109/eptc.2018.8654380
Autor:
Leong Ching Wai, Peter Hyun Kee Chang, Beibei Han, Yuandong Gu, Navab Singh, Daw Don Cheam, Guoqiang Wu
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
The development of a robust system-in-package (SiP) technology for MEMS sensors is reported in this paper. The MEMS sensor and the application-specific integrated circuit (ASIC) chip are stacked together on a quad-flat no-leads (QFN) substrate. Wire-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab8cf7ff5a7f7ce1c6318c4a8473b694
https://doi.org/10.1109/eptc.2018.8654385
https://doi.org/10.1109/eptc.2018.8654385
Autor:
Beibei Han, Zhaohui Chen, Eva Wai, Boon Long Lau, Tai Chong Chai, Lin Bu, Hyun-Kee Chang, Zhipeng Ding
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
A Wafer Level Chip Scale Packaging (WLCSP) solution with CuPd wire in epoxy mold compound (EMC) as through mold interconnection (TMI) was proposed for the capacitive MEMS such as accelerometer packaging. The size of fabricated WLCSP is 2 mm × 2 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0606a9f8b34a54f8ad0ce0e139454544
https://doi.org/10.1109/ectc.2018.00183
https://doi.org/10.1109/ectc.2018.00183
Publikováno v:
NEMS
In this paper, we present the development of 6-Degree-Of-Freedom (6-DOF) inertial sensors based on an advanced capacitive inertial sensor fabrication platform on 8-inch wafer. The reported platform integrates 3-axis gyroscopes and 3-axis acceleromete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dc70d05f44da9110c055be29be33d06
https://doi.org/10.1109/nems.2018.8556938
https://doi.org/10.1109/nems.2018.8556938
Autor:
Shuangqin Liu, Zouhair Sbiaa, Aveek N. Chatterjee, Hyun-Kee Chang, Alexandre Sinding, Stephen Breit, Ibrahim M. Elfadel, Ilker Ender Ocak, Wajih U. Syed, Jun Yan, Christopher Welham, Arnaud Parent
Publikováno v:
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
We present the implementation and validation of a novel model for simulating comb squeezed-film damping. The model is computationally efficient regardless of finger count and optionally includes top and bottom encapsulation surfaces surrounding the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6dc1802a8fa65d875560e9d789e5bdb
https://doi.org/10.1109/transducers.2017.7994487
https://doi.org/10.1109/transducers.2017.7994487
Autor:
Peter Hyun Kee Chang, Nan Wang, Li Yan Siow, Yuandong Gu, Qingxin Zhang, Lionel You Liang Wong, Chengliang Sun, Hongmiao Ji, Darmayuda I Made
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
This paper reports on the successful implementation of a wafer-level vacuum-packaged, CMOS-compatible aluminum nitride (AlN) based microelectromechanical system (MEMS) energy harvester (EH). The reported EH features high Q-factor (709.3) and high-g s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2159432cbaff9f08880b511e1532ccf8
https://doi.org/10.1109/ectc.2017.108
https://doi.org/10.1109/ectc.2017.108
Autor:
Christopher Welham, Wajih U. Syed, Zouhair Sbiaa, Ilker Ender Ocak, Hyun-Kee Chang, Stephen Breit, Jun Yan, Ibrahim M. Elfadel, Alexandre Sinding, Shuangqin Liu, Aveek N. Chatterjee
Publikováno v:
2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS).
A number of corrections to the well-known squeezed-film gas damping model are required to get accurate results for MEMS. This paper reports on the implementation and validation of a corrected squeezed-film damping (SFD) simulation for common MEMS str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dc164a200e570ae055d15c9602b1bb2
https://doi.org/10.1109/memsys.2017.7863551
https://doi.org/10.1109/memsys.2017.7863551
Autor:
Li Yan Siow, Peter Hyun Kee Chang, Yuandong Gu, Chengliang Sun, Qingxin Zhang, Hongmiao Ji, Nan Wang
Publikováno v:
2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS).
This paper experimentally demonstrates an aluminum nitride (AlN) based piezoelectric MEMS energy harvester (EH) with an operation bandwidth of 64.6Hz (859.9Hz–924.5Hz, 7.24%), peak output open-circuit voltage of 4.43V, and an output power of 82.24
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0057bcfc6d541c6262b0c981ea2c4638
https://doi.org/10.1109/memsys.2017.7863539
https://doi.org/10.1109/memsys.2017.7863539