Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hyun-Joon Bang"'
Effect of High Pressure Hydrogen or Deuterium Anneal on Polysilicon Channel Field Effect Transistors
Autor:
An Hoang Thuy Nguyen, Rino Choi, Sol Kang, Dong Hwi Lee, Hyun Joon Bang, Soo Yeun Han, Jae Won Choi, Manh Cuong Nguyen
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:10341-10345
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e908f727c0b2a740ce14883021b6ce5
https://doi.org/10.1166/jnn.2016.13156
https://doi.org/10.1166/jnn.2016.13156
Autor:
Hoichang Yang, Musarrat Hasan, Duc-Tai Tong, Hyun-Joon Bang, Seung-Won You, Manh-Cuong Nguyen, Jae Kyeong Jeong, Dong Hwi Lee, Rino Choi
Publikováno v:
Microelectronic Engineering. 147:27-30
Display Omitted We fabricated low temperature solution-based the In2O3/ZrO2 TFTs.Li doping enhances the crystallization of low-temperature solution-based In2O3.Enhanced crystallization of In2O3 reduces the inter-diffusion of In and Zr.Li doping incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::944bfa69126754071522e8f5db41eacc
https://doi.org/10.1016/j.mee.2015.04.060
https://doi.org/10.1016/j.mee.2015.04.060
Autor:
Duc Tai Tong, Yoon Seok Jeon, Hyun Joon Bang, Jae Kyoung Jeong, Seung Won You, Rino Choi, Manh Cuong Nguyen, Dong Hwi Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:7590-7592
Metal-oxide-semiconductor field effect transistors (MOSFETs) with various doses of La-incorporated in Hafnium-based dielectrics were characterized to evaluate the effect of La on dielectric and device properties. It is found that the Poole-Frenkel em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8da3dff2b40a0d600cebfb376a7faf3c
https://doi.org/10.1166/jnn.2015.11165
https://doi.org/10.1166/jnn.2015.11165
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